米6体育平台手机版

ZHCSF65B July 2016 – March 2024 CSD19538Q2

PRODUCTION DATA

3.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	100			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 80V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	2.8	3.2	3.8	V
R_DS(on)	Drain-to-source on resistance	V_GS = 6V, I_D = 5A		58	72	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10V, I_D = 5A		49	59	mΩ
g_fs	Transconductance	V_DS = 10V, I_D = 5A		19		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 50V, ƒ = 1MHz		349	454	pF
C_oss	Output capacitance			69	90	pF
C_rss	Reverse transfer capacitance			12.6	16.4	pF
R_G	Series gate resistance			4.6	9.2	Ω
Q_g	Gate charge total (10V)	V_DS = 50V, I_D = 5A		4.3	5.6	nC
Q_gd	Gate charge gate-to-drain			0.8		nC
Q_gs	Gate charge gate-to-source			1.6		nC
Q_g(th)	Gate charge at V_th			1.0		nC
Q_oss	Output charge	V_DS = 50V, V_GS = 0V		12.3		nC
t_d(on)	Turnon delay time	V_DS = 50V, V_GS = 10V, I_DS = 5A, R_G = 0Ω		5		ns
t_r	Rise time			3		ns
t_d(off)	Turnoff delay time			7		ns
t_f	Fall time			2		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 5A, V_GS = 0V		0.85	1.0	V
Q_rr	Reverse recovery charge	V_DS= 50V, I_F = 5A, di/dt = 300A/μs		94		nC
t_rr	Reverse recovery time	V_DS= 50V, I_F = 5A, di/dt = 300A/μs		32		ns