米6体育平台手机版

ZHCSF23A May 2016 – March 2017 CSD19538Q3A

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DNH|8
- MPDS575A

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsf23a_oa

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	100			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 80 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	2.8	3.2	3.8	V
R_DS(on)	Drain-to-source on resistance	V_GS = 6 V, I_D = 5 A		58	72	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 5 A		49	59	mΩ
g_fs	Transconductance	V_DS = 10 V, I_D = 5 A		6.1		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 50 V, ƒ = 1 MHz		349	454	pF
C_oss	Output capacitance			69	90	pF
C_rss	Reverse transfer capacitance			12.6	16.4	pF
R_G	Series gate resistance			4.6	9.2	Ω
Q_g	Gate charge total (10 V)	V_DS = 50 V, I_D = 5 A		4.3		nC
Q_gd	Gate charge gate-to-drain			0.8		nC
Q_gs	Gate charge gate-to-source			1.6		nC
Q_g(th)	Gate charge at V_th			1		nC
Q_oss	Output charge	V_DS = 50 V, V_GS = 0 V		12.3		nC
t_d(on)	Turnon delay time	V_DS = 50 V, V_GS = 10 V, I_DS = 5 A, R_G = 0 Ω		5		ns
t_r	Rise time			3		ns
t_d(off)	Turnoff delay time			7		ns
t_f	Fall time			2		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 5 A, V_GS = 0 V		0.85	1	V
Q_rr	Reverse recovery charge	V_DS= 50 V, I_F = 5 A, di/dt = 300 A/μs		94		nC
t_rr	Reverse recovery time	V_DS= 50 V, I_F = 5 A, di/dt = 300 A/μs		32		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			5.5	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			55	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.

Max R_θJA = 55°C/W when mounted on 1-in² (6.45-cm²) of 2-oz (0.071-mm) thick Cu.

Max R_θJA = 195°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 5 A	V_DS = 50 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 5 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 5.5°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching