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ZHCSGI4B August 2017 – February 2022 CSD22205L

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = –250 μA	–8			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –6.4 V			–100	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = –250 μA	–0.4	–0.7	–1.05	V
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.5 V, I_D = –0.2 A		30		mΩ
		V_GS = –1.8 V, I_D = –1 A		20	40
		V_GS = –2.5 V, I_D = –1 A		11.5	15.0
		V_GS = –4.5 V, I_D = –1 A		8.2	9.9
g_fs	Transconductance	V_DS = –0.8 V, I_D = –1 A		10.4		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = –4 V, ƒ = 1 MHz		1070	1390	pF
C_OSS	Output capacitance			560	730	pF
C_RSS	Reverse transfer capacitance			190	250	pF
R_G	Series gate resistance			30		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –4 V, I_D = –1 A		6.5	8.5	nC
Q_gd	Gate charge gate-to-drain			1.0		nC
Q_gs	Gate charge gate-to-source			1.2		nC
Q_g(th)	Gate charge at V_th			0.7		nC
Q_OSS	Output charge	V_DS = –4 V, V_GS = 0 V		4.1		nC
t_d(on)	Turnon delay time	V_DS = –4 V, V_GS = –4.5 V, I_D = –1 A , R_G = 0 Ω		30		ns
t_r	Rise time			14		ns
t_d(off)	Turnoff delay time			70		ns
t_f	Fall time			32		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_S = –1 A, V_GS = 0 V		–0.68	–1.0	V
Q_rr	Reverse recovery charge	V_DS= –4 V, I_F = –1 A, di/dt = 200 A/μs		16		nC
t_rr	Reverse recovery time	V_DS= –4 V, I_F = –1 A, di/dt = 200 A/μs		38		ns