ZHCSCO2E May 2014 – January 2022 CSD23382F4
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = –250 μA | –12 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –9.6 V | –1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –8 V | –10 | μA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = 250 μA | –0.5 | –0.8 | –1.1 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –1.8 V, IDS = –0.1 A | 149 | 199 | mΩ | ||
| VGS = –2.5 V, IDS = –0.5 A | 90 | 105 | mΩ | ||||
| VGS = –4.5 V, IDS = –0.5 A | 66 | 76 | mΩ | ||||
| gƒs | Transconductance | VDS = –10 V, IDS = –0.5 A | 3.4 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = –6 V, ƒ = 1 MHz | 180 | 235 | pF | ||
| Coss | Output Capacitance | 118 | 154 | pF | |||
| Crss | Reverse Transfer Capacitance | 12.8 | 16.6 | pF | |||
| RG | Series Gate Resistance | 350 | Ω | ||||
| Qg | Gate Charge Total (–4.5 V) | VDS = –6 V, IDS = –0.5 A | 1.04 | 1.35 | nC | ||
| Qgd | Gate Charge Gate-to-Drain | 0.15 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 0.50 | nC | ||||
| Qg(th) | Gate Charge at Vth | 0.18 | nC | ||||
| Qoss | Output Charge | VDS = –6 V, VGS = 0 V | 1.08 | nC | |||
| td(on) | Turn On Delay Time | VDS = –6 V, VGS = –4.5 V, IDS = –0.5 A,RG = 2 Ω | 28 | ns | |||
| tr | Rise Time | 25 | ns | ||||
| td(off) | Turn Off Delay Time | 66 | ns | ||||
| tƒ | Fall Time | 41 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = –0.5 A, VGS = 0 V | –0.75 | –1 | V | ||
| Qrr | Reverse Recovery Charge | VDS= –6 V, IF = –0.5 A, di/dt = 200 A/μs | 1.8 | nC | |||
| trr | Reverse Recovery Time | 8.4 | ns | ||||