5 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
Static Characteristics
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = –250 μA	–20			V
BV_GSS	Gate-to-Source Voltage	V_DS = 0 V, I_G = –250 μA	–6.1		–7.2	V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = –250 μA	–0.5	–0.8	–1.1	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = –2.5 V, I_D = –1.5 A		36	44	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = –4.5 V, I_D = –1.5 A		27	33	mΩ
g_fs	Transconductance	V_DS = –10 V, I_D = –1.5 A		12		S
Dynamic Characteristics
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		475	570	pF
C_OSS	Output Capacitance			234	281	pF
C_RSS	Reverse Transfer Capacitance			10.5	13.1	pF
Q_g	Gate Charge Total (–4.5 V)	V_DS = –10 V, I_D = –1.5 A		3.4	4.1	nC
Q_gd	Gate Charge Gate to Drain			0.2		nC
Q_gs	Gate Charge Gate to Source			1.1		nC
Q_g(th)	Gate Charge at V_th			0.6		nC
Q_OSS	Output Charge	V_DS = –10 V, V_GS = 0 V		3.8		nC
t_d(on)	Turn On Delay Time	V_DS = –10 V, V_GS = –4.5 V, I_D = –1.5 A R_G = 4 Ω		13.6		ns
t_r	Rise Time			8.8		ns
t_d(off)	Turn Off Delay Time			36.9		ns
t_f	Fall Time			14.2		ns
Diode Characteristics
V_SD	Diode Forward Voltage	I_S = –1.5 A, V_GS = 0 V		–0.8	–1	V
Q_rr	Reverse Recovery Charge	V_dd= –10 V, I_F = –1.5 A, di/dt = 200 A/μs		6.9		nC
t_rr	Reverse Recovery Time	V_dd= –10 V, I_F = –1.5 A, di/dt = 200 A/μs		11.6		ns