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ZHCSEW4B April 2016 – February 2022 CSD25480F3

PRODUCTION DATA

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 5-1 Saturation Characteristics

Figure 5-3 Transient Thermal Impedance

	V_DS = –5 V

Figure 5-2 Transfer Characteristics

	I_D = –0.4 A	V_DS = –10 V

Figure 5-4 Gate Charge

	I_D = –250 µA

Figure 5-6 Threshold Voltage vs Temperature

	I_D = –0.4 A

Figure 5-8 Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJA = 245°C/W

Figure 5-10 Maximum Safe Operating Area

Figure 5-5 Capacitance

Figure 5-7 On-State Resistance vs Gate-to-Source Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Maximum Drain Current vs Temperature