ZHCSBM7F September 2013 – February 2022 CSD25481F4
PRODUCTION DATA
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 5-1 Transient Thermal Impedance
Figure 5-2 Saturation Characteristics
Figure 5-3 Transfer Characteristics
Figure 5-4 Gate Charge
Figure 5-6 Threshold Voltage vs Temperature
Figure 5-8 Normalized On-State Resistance vs Temperature
| Single Pulse Typical RθJA =250°C/W (min Cu) | ||
Figure 5-5 Capacitance
Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
Figure 5-9 Typical Diode Forward Voltage
| Typical RθJA = 90°C/W (max Cu) | ||