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ZHCSBO3F October 2013 – January 2022 CSD25483F4

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–100	nA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –12 V			–50	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = –250 μA	–0.70	–0.95	–1.2	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.8 V, I_DS = –0.1 A		530	1070	mΩ
		V_GS = –2.5 V, I_DS = –0.5 A		338	390	mΩ
		V_GS = –4.5 V, I_DS = –0.5 A		210	245	mΩ
		V_GS = –8 V, I_DS = –0.5 A		175	205	mΩ
g_fs	Transconductance	V_DS = –10 V, I_DS = –0.5 A		1.4		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		198		pF
C_oss	Output Capacitance			82		pF
C_rss	Reverse Transfer Capacitance			5.8		pF
R_G	Series Gate Resistance			20		Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = –10 V, I_DS = –0.5 A		959		pC
Q_gd	Gate Charge Gate-to-Drain			160		pC
Q_gs	Gate Charge Gate-to-Source			252		pC
Q_g(th)	Gate Charge at V_th			122		pC
Q_oss	Output Charge	V_DS = –10 V, V_GS = 0 V		1081		pC
t_d(on)	Turn On Delay Time	V_DS = –10 V, V_GS = –4.5 V, I_DS = –0.5 A,R_G = 2 Ω		4.3		ns
t_r	Rise Time			3.7		ns
t_d(off)	Turn Off Delay Time			17.4		ns
t_f	Fall Time			7		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = –0.5 A, V_GS = 0 V		–0.75		V
Q_rr	Reverse Recovery Charge	V_DS= –10 V, I_F = –0.5 A, di/dt = 100 A/μs		1060		pC
t_rr	Reverse Recovery Time	V_DS= –10 V, I_F = –0.5 A, di/dt = 100 A/μs		7.5		ns