米6体育平台手机版

ZHCSFB8B August 2016 – February 2022 CSD25485F5

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –16 V			–100	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –12 V			–25	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = –250 μA	–0.7	–0.95	–1.3	V
R_DS(on)	Drain-to-source on resistance	V_GS = –1.8 V, I_DS = –0.1 A		89	250	mΩ
		V_GS = –2.5 V, I_DS = –0.9 A		51	70
		V_GS = –4.5 V, I_DS = –0.9 A		35	42
		V_GS = –8 V, I_DS = –0.9 A		29.7	35
g_fs	Transconductance	V_DS = –2 V, I_DS = –0.9 A		7		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		410	533	pF
C_oss	Output capacitance			212	276	pF
C_rss	Reverse transfer capacitance			17	23	pF
R_G	Series gate resistance			20		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –10 V, I_DS = –0.9 A		2.7	3.5	nC
Q_gd	Gate charge gate-to-drain			0.56		nC
Q_gs	Gate charge gate-to-source			0.67		nC
Q_g(th)	Gate charge at V_th			0.40		nC
Q_oss	Output charge	V_DS = –10 V, V_GS = 0 V		4.4		nC
t_d(on)	Turnon delay time	V_DS = –10 V, V_GS = –4.5 V, I_DS = –0.9 A, R_G = 2 Ω		14		ns
t_r	Rise time			6		ns
t_d(off)	Turnoff delay time			27		ns
t_f	Fall time			14		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = –0.9 A, V_GS = 0 V		–0.75	–1	V