米6体育平台手机版

ZHCSGW6B October 2017 – October 2021 CSD25501F3

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –16 V			–50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –6 V			–50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –16 V			–1	mA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = –250 μA	–0.45	–0.75	–1.05	V
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8 V, I_DS = –0.1 A		120	260	mΩ
		V_GS = –2.5 V, I_DS = –0.4 A		86	125
		V_GS = –4.5 V, I_DS = –0.4 A		64	76
g_fs	Transconductance	V_DS = –2 V, I_DS = –0.4 A		3.4		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 100 kHz		295	385	pF
C_oss	Output capacitance			70	91	pF
C_rss	Reverse transfer capacitance			4.1	5.3	pF
R_G	Series gate resistance			33		Ω
R_C	Series clamp resistance			10,000		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –10 V, I_DS = –0.4 A		1.02	1.33	nC
Q_gd	Gate charge gate-to-drain			0.09		nC
Q_gs	Gate charge gate-to-source			0.45		nC
Q_g(th)	Gate charge at V_th			0.36		nC
Q_oss	Output charge	V_DS = –10 V, V_GS = 0 V		1.8		nC
t_d(on)	Turnon delay time	V_DS = –10 V, V_GS = –4.5 V, I_DS = –0.4 A, R_G = 0 Ω		474		ns
t_r	Rise time			428		ns
t_d(off)	Turnoff delay time			1154		ns
t_f	Fall time			945		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = –0.4 A, V_GS = 0 V		–0.73	–0.95	V
Q_rr	Reverse recovery charge	V_DS = –10 V, I_F = –0.4 A, di/dt = 200 A/μs		3.0		nC
t_rr	Reverse recovery time	V_DS = –10 V, I_F = –0.4 A, di/dt = 200 A/μs		7.4		ns