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ZHCSGW6C October 2017 – June 2024 CSD25501F3

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

	I_D = –0.4A	V_DS = –10V

Figure 4-4 Gate Charge

	I_D = –250µA

Figure 4-6 Threshold Voltage vs Temperature

	I_D = –0.4A

Figure 4-8 Normalized On-State Resistance vs Temperature

	Single pulse, typical R_θJA = 255°C/W

Figure 4-10 Maximum Safe Operating Area

	V_DS = –5V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

	Typical R_θJA = 90°C/W

Figure 4-11 Maximum Drain Current vs Temperature