6 Revision History
Changes from Revision B (February 2017) to Revision C (November 2023)
- 将阈值电压 GS(th) 从 0.95V 更新为 1.0VGo
- 更新了整个文档中的表格、图和交叉参考的编号格式Go
- Updated Source-to-source on resistance VGS = 2.5 V from 14 mΩ to 12
mΩGo
- Updated Gate-to-source threshold voltage from 0.75 V min, 0.95 V
typ, 1.25 V max to 0.7 V min, 1.0 V typ, 1.4 V maxGo
Changes from Revision A (January 2016) to Revision B (February 2017)
- Added Diode Characteristics (VF(S-S)) in the Electrical Characteristics tableGo
- Added Figure 4-9 to Typical MOSFET Characteristics sectionGo
Changes from Revision * (November 2014) to Revision A (January 2016)
- Improved graph setup for readabilityGo