ZHCSD72C November   2014  – November 2023 CSD83325L

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方米6体育平台手机版_好二三四免责声明
    2. 5.2 接收文档更新通知
    3. 5.3 支持资源
    4. 5.4 Trademarks
    5. 5.5 静电放电警告
    6. 5.6 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

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Figure 4-1 Transient Thermal Impedance
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Figure 4-2 Saturation Characteristics
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VS1S2 = 5 V
Figure 4-3 Transfer Characteristics
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IS = 5 A VS1S2 = 6 V
Figure 4-4 Gate Charge
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IS = 250 µA
Figure 4-6 Threshold Voltage vs Temperature
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IS = 5 A
Figure 4-8 Normalized On-State Resistance vs Temperature
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Single pulse, max RθJA = 150°C/W
Figure 4-10 Maximum Safe Operating Area
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Figure 4-5 Capacitance
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Figure 4-7 On-State Source-to-Source Resistance vs Gate-to-Source Voltage
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Figure 4-9 Typical Diode Forward Voltage
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Figure 4-11 Maximum Source Current vs Temperature