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ZHCSDF5A December 2014 – May 2024 CSD85301Q2

PRODUCTION DATA

4.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

	I_D = 5A	V_DS = 10V

Figure 4-4 Gate Charge

	I_D = 5A

Figure 4-6 Threshold Voltage vs Temperature

	I_D = 5A

Figure 4-8 Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJA = 185°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-12 Maximum Drain Current vs Temperature

	V_DS = 5V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Single Pulse Unclamped Inductive Switching