米6体育平台手机版

ZHCSEH8 November 2015 CSD85302L

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_S1S2	Source-to-source voltage	V_GS = 0 V, I_S = 250 μA	20			V
I_S1S2	Source-to-source leakage current	V_GS = 0 V, V_S1S2 = 16 V			1	μA
I_GSS	Gate-to-source leakage current	V_S1S2 = 0 V, V_GS = 6 V			0.5	µA
I_GSS	Gate-to-source leakage current	V_S1S2 = 0 V, V_GS = 10V			4	µA
V_GS(th)	Gate-to-source threshold voltage	V_S1S2 = V_GS, I_S = 250 μA	0.68	0.9	1.3	V
R_S1S2(on)	Source-to-source on-resistance	V_GS = 2.5 V, I_S = 2 A	20	29	36	mΩ
		V_GS = 4.5 V, I_S = 2 A	14	20	24	mΩ
		V_GS = 6.5 V, I_S = 2 A	13	18.7	22.5	mΩ
g_fs	Transconductance	V_S1S2 = 2 V, I_S = 2 A		19		S
DYNAMIC CHARACTERISTICS⁽¹⁾
C_iss	Input capacitance	V_GS = 0 V, V_S1S2 = 10 V, ƒ = 1 MHz		718	933	pF
C_oss	Output capacitance			92	120	pF
C_rss	Reverse transfer capacitance			61	79	pF
Q_g	Gate charge total (4.5 V)	V_S1S2 = 10 V, I_S = 2 A		6.0	7.8	nC
Q_gd	Gate charge gate-to-drain			1.4		nC
Q_gs	Gate charge gate-to-source			1.2		nC
Q_g(th)	Gate charge at V_th			0.6		nC
Q_oss	Output charge	V_S1S2 = 10 V, V_GS = 0 V		2.3		nC
t_d(on)	Turn-on delay time	V_S1S2 = 10 V, V_GS = 4.5 V, I_S1S2 = 2 A, R_G = 0 Ω		37		ns
t_r	Rise time			54		ns
t_d(off)	Turn-off delay time			173		ns
t_f	Fall time			99		ns

(1) Charge and timing values specified are per single FET.

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾		75		°C/W
R_θJA	Junction-to-ambient thermal resistance⁽²⁾		175		°C/W

(1) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

	V_G2S2 = 9 V

Figure 2. Saturation Characteristics

I_S = 2 A		V_S1S2 = 6 V

Figure 4. Gate Charge

	I_S = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_S = 2 A

Figure 8. Normalized On-State Resistance vs Temperature

	Typical R_θJA = 75°C/W

Figure 10. Maximum Source Current vs Temperature

	V_S1S2 = 5 V	V_G2S2 = 9 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Source-to-Source Resistance vs
Gate-to-Source Voltage

Single pulse, max R_θJA = 90°C/W

Figure 9. Maximum Safe Operating Area