SLPS264D October   2010  – May 2015 CSD86330Q3D

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Power Loss Curves
    2. 6.2 Safe Operating Curves (SOA)
    3. 6.3 Normalized Curves
    4. 6.4 Calculating Power Loss and SOA
      1. 6.4.1 Design Example
      2. 6.4.2 Calculating Power Loss
      3. 6.4.3 Calculating SOA Adjustments
  7. 7Recommended PCB Design Overview
    1. 7.1 Electrical Performance
    2. 7.2 Thermal Performance
  8. 8Device and Documentation Support
    1. 8.1 Trademarks
    2. 8.2 Electrostatic Discharge Caution
    3. 8.3 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q3D Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation
    4. 9.4 Q3D Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQZ|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Device and Documentation Support

8.1 Trademarks

NexFET is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

8.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

8.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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