ZHCSHY1 March 2018 CSD86356Q5D
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | ||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 µA | 25 | V | ||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 20 V | 1 | µA | ||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = +10 / –8 V | 100 | nA | ||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 µA | 0.95 | 1.85 | V | |
| ZDS(on) | Effective AC on-impedance | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V,
IOUT = 20 A, ƒSW = 500 kHz, LOUT = 300 nH |
4.5 | mΩ | ||
| gfs | Transconductance | VDS = 2.5 V, IDS = 20 A | 70 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| CISS | Input capacitance | VGS = 0 V, VDS = 12.5 V, ƒ = 1 Mhz | 803 | 1040 | pF | |
| COSS | Output capacitance | 548 | 712 | pF | ||
| CRSS | Reverse transfer capacitance | 27 | 35 | pF | ||
| RG | Series gate resistance | 2.1 | 4.2 | Ω | ||
| Qg | Gate charge total (4.5 V) | VDS = 12.5 V, IDS = 20 A | 6.0 | 7.9 | nC | |
| Qgd | Gate charge – gate-to-drain | 1.3 | nC | |||
| Qgs | Gate charge – gate-to-source | 2.6 | nC | |||
| Qg(th) | Gate charge at Vth | 1.2 | nC | |||
| QOSS | Output charge | VDS = 12.5 V, VGS = 0 V | 10.3 | nC | ||
| td(on) | Turn on delay time | VDS = 12.5 V, VGS = 4.5 V, IDS = 20 A,
RG = 0 Ω |
7 | ns | ||
| tr | Rise time | 26 | ns | |||
| td(off) | Turn off delay time | 12 | ns | |||
| tf | Fall time | 3 | ns | |||
| DIODE CHARACTERISTICS | ||||||
| VSD | Diode forward voltage | IDS = 20 A, VGS = 0 V | 0.84 | 0.95 | V | |
| Qrr | Reverse recovery charge | VDD = 12.5 V, IF = 20 A, di/dt = 300 A/µs | 34 | nC | ||
| trr | Reverse recovery time | 23 | ns | |||