米6体育平台手机版

ZHCSHY1 March 2018 CSD86356Q5D

PRODUCTION DATA.

T_j = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 µA	25			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 20 V			1	µA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 / –8 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 µA	0.9		1.5	V
Z_DS(on)	Effective AC on-impedance	V_IN = 12 V, V_GS = 5 V, V_OUT = 1.3 V, I_OUT = 20 A, ƒ_SW = 500 kHz, L_OUT = 300 nH		0.8		mΩ
g_fs	Transconductance	V_DS = 2.5 V, I_DS = 20 A		106		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 Mhz		1930	2510	pF
C_OSS	Output capacitance			1350	1760	pF
C_RSS	Reverse transfer capacitance			64	83	pF
R_G	Series gate resistance			0.8	1.6	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 12.5 V, I_DS = 20 A		14.8	19.3	nC
Q_gd	Gate charge – gate-to-drain			3.3		nC
Q_gs	Gate charge – gate-to-source			5.2		nC
Q_g(th)	Gate charge at V_th			2.5		nC
Q_OSS	Output charge	V_DS = 12.5 V, V_GS = 0 V		24.9		nC
t_d(on)	Turn on delay time	V_DS = 12.5 V, V_GS = 4.5 V, I_DS = 20 A, R_G = 0 Ω		10		ns
t_r	Rise time			25		ns
t_d(off)	Turn off delay time			18		ns
t_f	Fall time			4		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = 20 A, V_GS = 0 V		0.79	0.95	V
Q_rr	Reverse recovery charge	V_DS = 12.5 V, I_F = 20 A, di/dt = 300 A/µs		60		nC
t_rr	Reverse recovery time	V_DS = 12.5 V, I_F = 20 A, di/dt = 300 A/µs		30		ns

Max R_θJA = 50°C/W when mounted on 1-in² (6.45-cm²) of
2-oz (0.071-mm) thick Cu.

Max R_θJA = 125°C/W when mounted on minimum pad area of
2-oz (0.071-mm) thick Cu.