米6体育平台手机版

ZHCSHY1 March 2018 CSD86356Q5D

PRODUCTION DATA.

T_A = 25°C, unless stated otherwise.

Figure 8. Control MOSFET Saturation

	V_DS = 5 V

Figure 10. Control MOSFET Transfer

	I_D = 20 A	V_DS = 12.5 V

Figure 12. Control MOSFET Gate Charge

	ƒ = 1 MHz	V_GS = 0

Figure 14. Control MOSFET Capacitance

	I_D = 250 µA

Figure 16. Control MOSFET V_GS(th)

Figure 18. Control MOSFET R_DS(ON) vs V_GS

	I_D = 20 A

Figure 20. Control MOSFET Normalized R_DS(ON)

Figure 22. Control MOSFET Body Diode

Figure 24. Control MOSFET Unclamped Inductive Switching

Figure 9. Sync MOSFET Saturation

	V_DS = 5 V

Figure 11. Sync MOSFET Transfer

	I_D = 20 A	V_DS = 12.5 V

Figure 13. Sync MOSFET Gate Charge

	ƒ = 1 MHz	V_GS = 0

Figure 15. Sync MOSFET Capacitance

	I_D = 250 µA

Figure 17. Sync MOSFET V_GS(th)

Figure 19. Sync MOSFET R_DS(ON) vs V_GS

	I_D = 20 A

Figure 21. Sync MOSFET Normalized R_DS(ON)

Figure 23. Sync MOSFET Body Diode

Figure 25. Sync MOSFET Unclamped Inductive Switching