米6体育平台手机版

ZHCSHY1 March 2018 CSD86356Q5D

PRODUCTION DATA.

1特性
2应用
3说明
1. 俯视图
  1. Device Images
4修订历史记录
5Specifications
6Application and Implementation
1. 6.1 Application Information
2. 6.2 Typical Application
  1. 6.2.1 Design Example: Calculating Power Loss and SOA
  2. 6.2.2 Operating Conditions
    1. 6.2.2.1 Calculating Power Loss
    2. 6.2.2.2 Calculating SOA Adjustments
7Layout
1. 7.1 Recommended Schematic Overview
2. 7.2 Recommended PCB Design Overview
  1. 7.2.1 Electrical Performance
  2. 7.2.2 Thermal Performance
8器件和文档支持
9机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)

DMV|8
- MPSS092

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcshy1_oa
zhcshy1_pm

5.1 Absolute Maximum Ratings

T_A = 25°C (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	V_IN to P_GND	–0.8	25	V
	V_SW to P_GND		25
	V_SW to P_GND (10 ns)		27
	T_G to T_GR	–8	10
	B_G to P_GND	–8	10
Pulsed current rating, IDM⁽²⁾			120	A
Power dissipation, P_D			12	W
Avalanche energy, E_AS	Sync FET, I_D = 88 A, L = 0.1 mH		387	mJ
Avalanche energy, E_AS	Control FET, I_D = 45 A, L = 0.1 mH		101	mJ
T_J and T_STG	Operating junction and storage temperature	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Pulse duration = 50 µS. Duty cycle = 0.01.