米6体育平台手机版

ZHCSHY1 March 2018 CSD86356Q5D

PRODUCTION DATA.

1特性
2应用
3说明
1. 俯视图
  1. Device Images
4修订历史记录
5Specifications
6Application and Implementation
1. 6.1 Application Information
2. 6.2 Typical Application
  1. 6.2.1 Design Example: Calculating Power Loss and SOA
  2. 6.2.2 Operating Conditions
    1. 6.2.2.1 Calculating Power Loss
    2. 6.2.2.2 Calculating SOA Adjustments
7Layout
1. 7.1 Recommended Schematic Overview
2. 7.2 Recommended PCB Design Overview
  1. 7.2.1 Electrical Performance
  2. 7.2.2 Thermal Performance
8器件和文档支持
9机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)

DMV|8
- MPSS092

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcshy1_oa
zhcshy1_pm

5.2 Recommended Operating Conditions

T_A = 25°C (unless otherwise noted)

		MIN	MAX	UNIT
V_GS	Gate drive voltage	4.5	8	V
V_IN	Input supply voltage⁽¹⁾		22	V
ƒ_SW	Switching frequency C_BST = 0.1 µF (min)		1500	kHz
	Operating current		40	A
T_J	Operating temperature		125	°C
T_STG	Storage temperature		125	°C

(1) Operating at high V_IN can create excessive AC voltage overshoots on the switch node (V_SW) during MOSFET switching transients. For
reliable operation, the switch node (V_SW) to ground voltage must remain at or below the Absolute Maximum Ratings.