米6体育平台手机版

ZHCSAE5B September 2012 – April 2018 CSD86360Q5D

PRODUCTION DATA.

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	Q1 Control FET			Q2 Sync FET
PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	25			25			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 20 V			1			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 / –8 V			100			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	1		2.1	0.75		1.15	V
Z_DS(on)	Drain-to-source on-impedance	V_IN = 12 V, V_DD = 5 V, V_OUT = 1.3 V I_OUT = 25 A, ƒ_SW = 500 kHz, L_OUT = 0.3 μH		3.7			0.7		mΩ
g_fs	Transconductance	V_DS = 10 V, I_DS = 20 A		113			169		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance⁽¹⁾	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		1590	2060		3910	5080	pF
C_OSS	Output capacitance⁽¹⁾			840	1090		1970	2560	pF
C_RSS	Reverse transfer capacitance⁽¹⁾			42	54		53	69	pF
R_G	Series gate resistance⁽¹⁾			1.2	2.5		1.1	2.2	Ω
Q_g	Gate charge total (4.5 V)⁽¹⁾	V_DS = 12.5 V, I_DS = 20 A		9.7	12.6		23	30	nC
Q_gd	Gate charge gate-to-drain			2.3			3.6		nC
Q_gs	Gate charge gate-to-source			3.5			6.0		nC
Q_g(th)	Gate charge at Vth			1.9			3.5		nC
Q_OSS	Output charge	V_DS = 12.5 V, V_GS = 0 V		15.1			33		nC
t_d(on)	Turnon delay time	V_DS = 12.5 V, V_GS = 4.5 V, I_DS = 20 A, R_G = 2 Ω		8.4			9.5		ns
t_r	Rise time			20.4			14.8		ns
t_d(off)	Turnoff delay time			14.5			29.3		ns
t_f	Fall time			4.3			6.6		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = 20 A, V_GS = 0 V		0.85	1		0.75	0.82	V
Q_rr	Reverse recovery charge	V_dd = 12 V, I_F = 20 A, di/dt = 300 A/μs		27			50		nC
t_rr	Reverse recovery time	V_dd = 12 V, I_F = 20 A, di/dt = 300 A/μs		22			34		ns

(1) Specified by design.

Max R_θJA = 50°C/W when mounted on 1 in² (6.45 cm²) of 2-oz (0.071-mm) thick Cu.

Max R_θJA = 102°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.