SLPS284D August   2011  – December 2016 CSD87330Q3D

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
      2. 6.2.2 Operating Conditions
        1. 6.2.2.1 Calculating Power Loss
        2. 6.2.2.2 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Performance
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Community Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q3D Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation
    4. 9.4 Q3D Tape and Reel Information
    5. 9.5 Pin Configuration

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机械数据 (封装 | 引脚)
  • DPB|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted)(1)
MIN MAX UNIT
Voltage 30 V
VSW to PGND 30
VSW to PGND (10 ns) 32
TG to TGR –8 10
BG to PGND –8 10
Pulsed current rating, IDM(2) 60 A
Power dissipation, PD 6 W
Avalanche energy, EAS Sync FET, ID = 56 A, L = 0.1 mH 157 mJ
Control FET, ID = 36 A, L = 0.1 mH 65
Operating junction, TJ –55 150 °C
Storage temperature, TSTG –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Pulse duration ≤ 50 µs, duty cycle ≤ 1%.

5.2 Recommended Operating Conditions

TA = 25° (unless otherwise noted)
MIN MAX UNIT
VGS Gate drive voltage 4.5 8 V
VIN Input supply voltage 27 V
fSW Switching frequency CBST = 0.1 μF (min) 1500 kHz
Operating current 20 A
TJ Operating temperature 125 °C

5.3 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance (min Cu)(2) 135 °C/W
Junction-to-ambient thermal resistance (max Cu)(2)(1) 73
RθJC Junction-to-case thermal resistance (top of package)(2) 29 °C/W
Junction-to-case thermal resistance (PGND pin)(2) 2.5
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2) Cu.
(2) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board design.

5.4 Power Block Performance(1)

TA = 25° (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
PLOSS Power loss(1) VIN = 12 V, VGS = 5 V, VOUT = 1.3 V,
IOUT = 15 A, ƒSW = 500 kHz,
LOUT = 1 µH, TJ = 25°C 		2 W
IQVIN VIN quiescent current TG to TGR = 0 V
BG to PGND = 0 V		 10 µA
(1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and using a high current 5-V driver IC.

5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS Q1 Control FET Q2 Sync FET UNIT
MIN TYP MAX MIN TYP MAX
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 30 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1 2.1 0.75 1.15 V
ZDS(on) Effective AC on-impedance VIN = 12 V, VGS = 5 V,
VOUT = 1.3 V, IOUT = 15 A,
ƒSW = 500 kHz, LOUT = 1 µH		 9.45 3.6 mΩ
gfs Transconductance VDS = 15 V, IDS = 15 A 51 76 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		 750 900 1360 1632 pF
COSS Output capacitance 310 370 580 700 pF
CRSS Reverse transfer capacitance 13 16 35 44 pF
RG Series gate resistance 1.5 3 0.8 1.6 Ω
Qg Gate charge total (4.5 V) VDS = 15 V,
IDS = 15 A		 4.8 5.8 9.6 11.5 nC
Qgd Gate charge - gate-to-drain 0.9 1.8 nC
Qgs Gate charge - gate-to-source 1.5 2 nC
Qg(th) Gate charge at Vth 0.9 1.1 nC
QOSS Output charge VDS = 14 V, VGS = 0 V 6 11 nC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V,
IDS = 15 A, RG = 2 Ω		 4.5 4.5 ns
tr Rise time 6.8 7.5 ns
td(off) Turnoff delay time 9.4 9.1 ns
tf Fall time 1.7 1.6 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 15 A, VGS = 0 V 0.85 1 0.85 1 V
Qrr Reverse recovery charge VDS = 14 V, IF = 15 A,
di/dt = 300 A/µs		 10 15 nC
trr Reverse recovery time 14 18 ns

CSD87330Q3D M0205-01_LPS264.gif
Max RθJA = 73°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD87330Q3D M0206-01_LPS264.gif
Max RθJA = 135°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.

5.6 Typical Power Block Device Characteristics

Test conditions: VIN = 12 V, VDD = 5 V, ƒSW = 500 kHz, VOUT = 1.3 V, LOUT = 1 µH, IOUT = 20 A, TJ = 125°C, unless stated otherwise.
CSD87330Q3D graph01_LPS284.png
Figure 1. Power Loss vs Output Current
CSD87330Q3D graph03_LPS284.png
Figure 3. Safe Operating Area – PCB Vertical Mount (1)
CSD87330Q3D graph05_LPS284.png
Figure 5. Typical Safe Operating Area The Typical Power Block System Characteristic curves are based on measurements made on a PCB design with dimensions of 4 in (W) × 3.5 in (L) x 0.062 in (H) and 6 copper layers of 1-oz copper thickness. See
1. The Typical Power Block System Characteristic curves are based on measurements made on a PCB design with dimensions of 4 in (W) × 3.5 in (L) x 0.062 in (H) and 6 copper layers of 1-oz copper thickness. SeeApplication and Implementation for detailed explanation.
CSD87330Q3D graph02_LPS284.png
Figure 2. Power Loss vs Temperature
CSD87330Q3D graph04_LPS284.png
Figure 4. Safe Operating Area – PCB Horizontal Mount (1)
CSD87330Q3D graph06_LPS284.png
Figure 6. Normalized Power Loss vs Switching Frequency
CSD87330Q3D graph08_LPS284.png
Figure 8. Normalized Power Loss vs Output Voltage
CSD87330Q3D graph07_LPS284.png
Figure 7. Normalized Power Loss vs Input Voltage
CSD87330Q3D graph09_LPS284.png
Figure 9. Normalized Power Loss vs Output Inductance

5.7 Typical Power Block MOSFET Characteristics

TA = 25°C, unless stated otherwise.
CSD87330Q3D graph10_LPS284.png
Figure 10. Control MOSFET Saturation
CSD87330Q3D graph12_LPS284.png
Figure 12. Control MOSFET Transfer
CSD87330Q3D graph14_LPS284.png
Figure 14. Control MOSFET Gate Charge
CSD87330Q3D graph16_LPS284.png
Figure 16. Control MOSFET Capacitance
CSD87330Q3D graph18_LPS284.png
Figure 18. Control MOSFET VGS(th)
CSD87330Q3D graph20_LPS284.png
Figure 20. Control MOSFET RDS(on) vs VGS
CSD87330Q3D graph22_LPS284.png
Figure 22. Control MOSFET Normalized RDS(on)
CSD87330Q3D graph24_LPS284.png
Figure 24. Control MOSFET Body Diode
CSD87330Q3D graph26_LPS284.png
Figure 26. Control MOSFET Unclamped Inductive Switching
CSD87330Q3D graph11_LPS284.png
Figure 11. Sync MOSFET Saturation
CSD87330Q3D graph13_LPS284.png
Figure 13. Sync MOSFET Transfer
CSD87330Q3D graph15_LPS284.png
Figure 15. Sync MOSFET Gate Charge
CSD87330Q3D graph17_LPS284.png
Figure 17. Sync MOSFET Capacitance
CSD87330Q3D graph19_LPS284.png
Figure 19. Sync MOSFET VGS(th)
CSD87330Q3D graph21_LPS284.png
Figure 21. Sync MOSFET RDS(on) vs VGS
CSD87330Q3D graph23_LPS284.png
Figure 23. Sync MOSFET Normalized RDS(on)
CSD87330Q3D graph25_LPS284.png
Figure 25. Sync MOSFET Body Diode
CSD87330Q3D graph27_LPS284.png
Figure 27. Sync MOSFET Unclamped Inductive Switching
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