米6体育平台手机版

ZHCSEO0B February 2016 – April 2018 CSD87335Q3D

PRODUCTION DATA.

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	Q1 Control FET			Q2 Sync FET			UNIT
PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 µA	30			30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1			1	µA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 V / –8 V			100			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 µA	1.0		1.9	0.75		1.20	V
Z_DS(on)	Effective AC on-impedance	V_IN = 12 V, V_GS = 5 V, V_OUT = 1.3 V, I_OUT = 15 A, ƒ_SW = 500 kHz, L_OUT = 950 nH		6.7			1.9		mΩ
g_fs	Transconductance	V_DS = 3 V, I_DS = 15 A		59			107		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		805	1050		1620	2100	pF
C_OSS	Output capacitance			412	536		783	1020	pF
C_RSS	Reverse transfer capacitance			15	20		28	36	pF
R_G	Series gate resistance			1.2	2.4		0.6	1.2	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_DS = 15 A		5.7	7.4		10.7	14.0	nC
Q_gd	Gate charge – gate-to-drain			1.1			1.7		nC
Q_gs	Gate charge – gate-to-source			2.1			2.8		nC
Q_g(th)	Gate charge at Vth			1.1			1.4		nC
Q_OSS	Output charge	V_DS = 15 V, V_GS = 0 V		11			19		nC
t_d(on)	Turnon delay time	V_DS = 15 V, V_GS = 4.5 V, I_DS = 15 A, R_G = 2 Ω		8			8		ns
t_r	Rise time			29			27		ns
t_d(off)	Turnoff delay time			13			17		ns
t_f	Fall time			4			5		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = 15 A, V_GS = 0 V		0.8	1.0		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DS = 15 V, I_F = 15 A, di/dt = 300 A/µs		24			40		nC
t_rr	Reverse recovery time	V_DS = 15 V, I_F = 15 A, di/dt = 300 A/µs		17			22		ns

Max R_θJA = 73°C/W when mounted on 1 in² (6.45 cm²) of 2-oz (0.071-mm) thick Cu.

Max R_θJA = 135°C/W when mounted on minimum pad area of 2-oz. (0.071-mm) thick Cu.