ZHCSEO0B February 2016 – April 2018 CSD87335Q3D
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | VIN to PGND | 30 | V | |
VSW to PGND | 30 | |||
VSW to PGND (10 ns) | 32 | |||
TG to TGR | –8 | 10 | ||
BG to PGND | –8 | 10 | ||
Pulsed current rating, IDM(2) | 70 | A | ||
Power dissipation, PD | 6 | W | ||
Avalanche energy, EAS | Sync FET, ID = 51 A, L = 0.1 mH | 130 | mJ | |
Control FET, ID = 33 A, L = 0.1 mH | 54 | |||
Operating junction and storage temperature, TJ, TSTG | –55 | 150 | °C |