ZHCSD83B February 2015 – May 2019 CSD87501L
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVS1S2 | Source-to-source voltage | VGS = 0 V, IS = 250 μA | 30 | V | |||
| IS1S2 | Source-to-source leakage current | VGS = 0 V, VS1S2 = 24 V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VS1S2 = 0 V, VGS = 20 V | 10 | µA | |||
| VGS(th) | Gate-to-source threshold voltage | VS1S2 = VGS, IS = 250 μA | 1.3 | 1.8 | 2.3 | V | |
| RS1S2(on) | Source-to-source on-resistance | VGS = 4.5 V, IS = 7 A | 9.3 | 11.0 | mΩ | ||
| VGS = 10 V, IS = 7 A | 6.6 | 7.8 | |||||
| gfs | Transconductance | VS1S2 = 3 V, IS = 7 A | 48 | S | |||
| DYNAMIC CHARACTERISTICS(1) | |||||||
| Ciss | Input capacitance | VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz | 1620 | 2110 | pF | ||
| Coss | Output capacitance | 189 | 246 | pF | |||
| Crss | Reverse transfer capacitance | 152 | 198 | pF | |||
| RG | Series gate resistance | 300 | 450 | Ω | |||
| Qg | Gate charge total (4.5 V) | VS1S2 = 15 V, IS = 7 A | 15 | 20 | nC | ||
| Qg | Gate charge total (10 V) | 31 | 40 | nC | |||
| Qgd | Gate charge gate-to-drain | 6.0 | nC | ||||
| Qgs | Gate charge gate-to-source | 5.0 | nC | ||||
| Qg(th) | Gate charge at Vth | 2.5 | nC | ||||
| Qoss | Output charge | VS1S2 = 15 V, VGS = 0 V | 7.6 | nC | |||
| td(on) | Turn on delay time | VS1S2 = 15 V, VGS = 10 V,
IS1S2 = 7 A, RG = 0 Ω |
164 | ns | |||
| tr | Rise time | 260 | ns | ||||
| td(off) | Turn off delay time | 709 | ns | ||||
| tf | Fall time | 712 | ns | ||||