米6体育平台手机版

ZHCSGQ9 September 2017 CSD87503Q3E

PRODUCTION DATA.

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage⁽¹⁾	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current⁽¹⁾	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current⁽¹⁾	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage⁽¹⁾	V_DS = V_GS, I_D = 250 μA	1.3	1.7	2.1	V
R_DD(on)	Drain-to-drain on-resistance	V_GS = 4.5 V, I_D1D2 = 6 A		17.3	21.9	mΩ
R_DD(on)	Drain-to-drain on-resistance	V_GS = 10 V, I_D1D2 = 6 A		13.5	16.9	mΩ
g_fs	Transconductance	V_DS = 3 V, I_D1D2 = 6 A		24		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_D1D2 = 15 V, ƒ = 1 MHz		782	1020	pF
C_OSS	Output capacitance			157	204	pF
C_RSS	Reverse transfer capacitance			149	194	pF
R_g	Series gate resistance⁽¹⁾			1.5	3.0	Ω
Q_g	Gate charge total (4.5 V)	V_D1D2 = 15 V, I_D1D2 = 6 A		13.4	17.4	nC
Q_g	Gate charge total (10 V)			32.9	42.8	nC
Q_gd	Gate charge gate-to-drain			5.8		nC
Q_gs	Gate charge gate-to-source			4.8		nC
Q_g(th)	Gate charge at V_th			1.0		nC
Q_OSS	Output charge	V_D1D2 = 15 V, V_GS = 0 V		4.3		nC
t_d(on)	Turnon delay time	V_D1D2 = 15 V, V_GS = 10 V, I_D1D2 = 6 A, R_G = 0 Ω		10		ns
t_r	Rise time			40		ns
t_d(off)	Turnoff delay time			25		ns
t_f	Fall time			8		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage⁽¹⁾	I_D = 0.5 A, V_GS = 0 V		0.75	0.95	V
Q_rr	Reverse recovery charge⁽¹⁾	V_DS = 15 V, I_F = 6 A, di/dt = 300 A/μs		9.2		nC
t_rr	Reverse recovery time⁽¹⁾	V_DS = 15 V, I_F = 6 A, di/dt = 300 A/μs		14		ns

(1) Parameter measured on both MOSFETs individually. Table values are for a single FET.