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ZHCSCQ9A January 2014 – August 2014 CSD88537ND

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

D|8
- MSOI002K

散热焊盘机械数据 (封装 | 引脚)

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5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.6	3	3.6	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6 V, I_D = 8 A		15	19	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 8 A		12.5	15	mΩ
g_ƒs	Transconductance	V_DS = 30 V, I_D = 8 A		42		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		1080	1400	pF
C_oss	Output Capacitance			133	173	pF
C_rss	Reverse Transfer Capacitance			4	5.2	pF
R_G	Series Gate Resistance			5.5	11	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 30 V, I_D = 8 A		14	18	nC
Q_gd	Gate Charge Gate-to-Drain			2.3		nC
Q_gs	Gate Charge Gate-to-Source			4.6		nC
Q_g(th)	Gate Charge at V_th			3.4		nC
Q_oss	Output Charge	V_DS = 30 V, V_GS = 0 V		25		nC
t_d(on)	Turn On Delay Time	V_DS = 30 V, V_GS = 10 V, I_DS = 8 A, R_G = 0 Ω		6		ns
t_r	Rise Time			15		ns
t_d(off)	Turn Off Delay Time			5		ns
t_ƒ	Fall Time			19		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 8 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 30 V, I_F = 8 A, di/dt = 300 A/μs		50		nC
t_rr	Reverse Recovery Time	V_DS= 30 V, I_F = 8 A, di/dt = 300 A/μs		30		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJL	Junction-to-Lead Thermal Resistance⁽¹⁾			20	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			75	°C/W

(1) R_θJL is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJL is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	V_DS = 5 V

Figure 3. Transfer Characteristics

I_D = 8 A	V_DS = 30 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 8 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse	Max R_θJL = 20°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching