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ZHCSC33A February 2014 – December 2023 CSD88539ND

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.6	3.0	3.6	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6 V, I_D = 5 A		27	34	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 5 A		23	28	mΩ
g_fs	Transconductance	V_DS = 30 V, I_D = 5 A		19		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		570	741	pF
C_oss	Output Capacitance			70	91	pF
C_rss	Reverse Transfer Capacitance			2.0	2.6	pF
R_G	Series Gate Resistance			6.6	13.2	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 30 V, I_D = 5 A		7.2	9.4	nC
Q_gd	Gate Charge Gate to Drain			1.1		nC
Q_gs	Gate Charge Gate to Source			2.7		nC
Q_g(th)	Gate Charge at V_th			1.8		nC
Q_oss	Output Charge	V_DS = 30 V, V_GS = 0 V		9.6		nC
t_d(on)	Turn On Delay Time	V_DS = 30 V, V_GS = 10 V, I_DS = 5 A, R_G = 0 Ω		5		ns
t_r	Rise Time			9		ns
t_d(off)	Turn Off Delay Time			14		ns
t_f	Fall Time			4		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 5 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 30 V, I_F = 5A, di/dt = 300A/μs		37		nC
t_rr	Reverse Recovery Time	V_DS= 30 V, I_F = 5A, di/dt = 300A/μs		21		ns