米6体育平台手机版

SLPS673 March 2017 CSD95491Q5MC

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

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6 Specifications

6.1 Absolute Maximum Ratings

T_A = 25°C (unless otherwise stated)⁽¹⁾

		MIN	MAX	UNIT
	V_IN to P_GND	–0.3	20	V
	V_IN to V_SW	–0.3	20	V
	V_IN to V_SW (10 ns)		23	V
	V_SW to P_GND	–0.3	20	V
	V_SW to P_GND (10 ns)	–7	23	V
	V_DD to P_GND	–0.3	7	V
	EN/FCCM, TAO/FLT, LSET to P_GND⁽²⁾	–0.3	V_DD + 0.3	V
	IOUT, VOS, PWM to P_GND	–0.3	7	V
	REFIN	–0.3	3.6	V
	BOOT to BOOTR⁽²⁾	–0.3	V_DD + 0.3	V
	BOOT to P_GND	–0.3	30	V
T_J	Operating junction temperature	–55	150	°C
T_stg	Storage temperature	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Should not exceed 7 V.

6.2 ESD Ratings

				VALUE		UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM)		±2000		V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM)		±500		V

6.3 Recommended Operating Conditions

T_A = 25°C (unless otherwise stated)

PARAMETER		CONDITIONS	MIN	MAX	UNIT
V_DD	Driver supply voltage		4.5	5.5	V
V_IN	Input supply voltage⁽¹⁾		4.5	16	V
V_OUT	Output voltage			5.5	V
PWM	PWM to P_GND			V_DD + 0.3	V
I_OUT	Continuous output current	V_IN = 12 V, V_DD = 5 V, V_OUT = 1.2 V, ƒ_SW = 500 kHz⁽²⁾		60	A
I_OUT-PK	Peak output current⁽³⁾	V_IN = 12 V, V_DD = 5 V, V_OUT = 1.2 V, ƒ_SW = 500 kHz⁽²⁾		90	A
ƒ_SW	Switching frequency	C_BST = 0.1 µF (min), V_OUT = 2.5 V (max)		1250	kHz
	On-time duty cycle	ƒ_SW = 1 MHz		85%
	Minimum PWM on-time		20		ns
	Operating junction temperature		–40	125	°C

(1) Operating at high V_IN can create excessive AC voltage overshoots on the switch node (V_SW) during MOSFET switching transients. For reliable operation, the switch node (V_SW) to ground voltage must remain at or below the Absolute Maximum Ratings.

(2) Measurement made with six 10-µF (TDK C3216X7R1C106KT or equivalent) ceramic capacitors across V_IN to P_GND pins.

(3) System conditions as defined in Note 2. Peak output current is applied for t_p = 50 µs.