8.2 Power Loss Curves

MOSFET centric parameters such as R_DS(ON) and Q_gd are primarily needed by engineers to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 1 plots the power loss of the CSD97374Q4M as a function of load current. This curve is measured by configuring and running the CSD97374Q4M as it would be in the final application (see Figure 14). The measured power loss is the CSD97374Q4M device power loss which consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.

The power loss curve in Figure 1 is measured at the maximum recommended junction temperature of
T_J = 125°C under isothermal test conditions.