ZHCSJL8A April   2019  – September 2019 DLP3034-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      DLPDLP3034-Q1 系统框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Timing Requirements
    8. 6.8  Switching Characteristics
    9. 6.9  System Mounting Interface Loads
    10. 6.10 Physical Characteristics of the Micromirror Array
    11. 6.11 Micromirror Array Optical Characteristics
    12. 6.12 Window Characteristics
    13. 6.13 Chipset Component Usage Specification
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Micromirror Array
      2. 7.3.2 Double Data Rate (DDR) Interface
      3. 7.3.3 Micromirror Switching Control
      4. 7.3.4 DMD Voltage Supplies
      5. 7.3.5 Logic Reset
      6. 7.3.6 Temperature Sensing Diode
        1. 7.3.6.1 Temperature Sense Diode Theory
      7. 7.3.7 DMD JTAG Interface
    4. 7.4 System Optical Considerations
      1. 7.4.1 Numerical Aperture and Stray Light Control
      2. 7.4.2 Pupil Match
      3. 7.4.3 Illumination Overfill and Alignment
    5. 7.5 Micromirror Array Temperature Calculation
    6. 7.6 Micromirror Landed-On/Landed-Off Duty Cycle
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
    3. 8.3 Application Mission Profile Consideration
    4. 8.4 Illumination Mission Profile Considerations
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply Sequencing Requirements
      1. 9.1.1 Power Up and Power Down
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Temperature Diode Pins
    3. 10.3 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
      2. 11.1.2 器件标记
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 器件处理
    8. 11.8 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
SUPPLY VOLTAGE RANGE
VREF LVCMOS interface power supply voltage(3) 1.65 1.8 1.95 V
VCC LVCMOS logic power supply voltage(3) 2.25 2.5 2.75 V
VOFFSET Mirror electrode and HVCMOS voltage(3) 8.25 8.5 8.75 V
VBIAS Mirror electrode voltage 15.5 16 16.5 V
|VBIAS – VOFFSET| Supply voltage delta(2) 8.75 V
VRESET Mirror electrode voltage –9.5 –10 –10.5 V
VP  VT+ Positive going threshold voltage 0.4 × VREF 0.7 × VREF V
VN  VT– Negative going threshold voltage  0.3 × VREF 0.6 × VREF V
VH  ∆VT Hysteresis voltage (Vp – Vn) 0.1 × VREF 0.4 × VREF V
IOH_TDO High level output current @ Voh = 2.25 V, TDO, Vcc = 2.25 V –2 mA
IOL_TDO Low level output current  @ Vol = 0.4 V, TDO, Vcc = 2.25 V 2 mA
TEMPERATURE DIODE
ITEMP_DIODE Max current source into temperature diode(4) 120 µA
ENVIRONMENTAL
TARRAY Operating DMD array temperature (1) –40 105 °C
ILLsub-385nm Illumination, wavelength < 385 nm 2.0 mW/cm2
ILL385-to-395nm Illumination, 385 nm < wavelength < 395 nm 250 mW/cm2
ILL395-to-400nm Illumination, 395 nm < wavelength < 400 nm 800 mW/cm2
ILL400-to-420nmnm Illumination, 400 nm < wavelength < 420 nm 8.0 W/cm2
ILLVIS Illumination, 420 nm < wavelength < 800 nm Thermally limited(5) W/cm2
ILLOVERFILL Illumination overfill maximum heat load in areas shown in Figure 1(6) TARRAY ≤ 75°C 26 mW/mm2
Illumination overfill maximum heat load in areas shown in Figure 1(6) TARRAY > 75°C 20 mW/mm2
(1) DMD active array temperature can be calculated as shown in Micromirror Array Temperature Calculation section. Additionally, the DMD array temperature is monitored in the system using the TMP411-Q1 and DLPC120-Q1 as shown in the system block diagram.
(2) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than or equal to 8.75 V.
(3) VBIAS, VCC, VOFFSET, VREF, VRESET, VSS are required to operate the DMD.
(4) Temperature Diode is to allow accurate measurement of the DMD array temperature during operation.
(5) Limited by the resulting micromirror array temperature. Refer to the calculation example in Micromirror Array Temperature Calculation section.
(6) The active area of the DLP303x-Q1 device is surrounded by an aperture on the inside of the DMD window surface that masks structures of the DMD device assembly from normal view. The aperture is sized to anticipate several optical conditions. Overfill light illuminating the area outside the active array can scatter and create adverse effects to the performance of an end application using the DMD. The illumination optical system should be designed to minimize light flux incident outside the active array. Depending on the particular system's optical architecture and assembly tolerances, the amount of overfill light on the outside of the active array may cause system performance degradation.
DLP3034-Q1 DS-s450AutoG15-Ap-illum.gifFigure 1. Illumination Overfill Diagram
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