ZHCSJL8A April   2019  – September 2019 DLP3034-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      DLPDLP3034-Q1 系统框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Timing Requirements
    8. 6.8  Switching Characteristics
    9. 6.9  System Mounting Interface Loads
    10. 6.10 Physical Characteristics of the Micromirror Array
    11. 6.11 Micromirror Array Optical Characteristics
    12. 6.12 Window Characteristics
    13. 6.13 Chipset Component Usage Specification
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Micromirror Array
      2. 7.3.2 Double Data Rate (DDR) Interface
      3. 7.3.3 Micromirror Switching Control
      4. 7.3.4 DMD Voltage Supplies
      5. 7.3.5 Logic Reset
      6. 7.3.6 Temperature Sensing Diode
        1. 7.3.6.1 Temperature Sense Diode Theory
      7. 7.3.7 DMD JTAG Interface
    4. 7.4 System Optical Considerations
      1. 7.4.1 Numerical Aperture and Stray Light Control
      2. 7.4.2 Pupil Match
      3. 7.4.3 Illumination Overfill and Alignment
    5. 7.5 Micromirror Array Temperature Calculation
    6. 7.6 Micromirror Landed-On/Landed-Off Duty Cycle
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
    3. 8.3 Application Mission Profile Consideration
    4. 8.4 Illumination Mission Profile Considerations
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply Sequencing Requirements
      1. 9.1.1 Power Up and Power Down
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Temperature Diode Pins
    3. 10.3 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
      2. 11.1.2 器件标记
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 器件处理
    8. 11.8 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.6.1 Temperature Sense Diode Theory

A temperature sensing diode is based on the fundamental current and temperature characteristics of a transistor. The diode is formed by connecting the transistor base to the collector. Two different known currents flow through the diode and the resulting diode voltage is measured in each case. The difference in their base-emitter voltages is proportional to the absolute temperature of the transistor.

Refer to the TMP411-Q1 Data Sheet for detailed information about temperature diode theory and measurement. Figure 11 and Figure 12 illustrate the relationship between the current and voltage through the diode.

DLP3034-Q1 temp_sens_diode_theory.gifFigure 11. Temperature Measurement Theory
DLP3034-Q1 temp_sense_diode_theory_vbe.gifFigure 12. Example of Delta VBE vs Temperature
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