米6体育平台手机版

ZHCSRE5B December 2022 – August 2024 DLP4621-Q1

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.6 Electrical Characteristics

Over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	MAX	UNIT
CURRENT
I_DD	Supply current: VDD ⁽²⁾	VDD = 1.95 V		220	mA
I_DDI	Supply current: VDDI ⁽²⁾	VDDI = 1.95 V		62	mA
I_OFFSET	Supply current: VOFFSET	VOFFSET = 8.75 V		35	mA
I_BIAS	Supply current: VBIAS	VBIAS = 16.5 V		1.5	mA
I_RESET	Supply current: VRESET	VRESET = -10.5 V	-16		mA
POWER
P_DD	Supply power dissipation: VDD ⁽²⁾	VDD = 1.95 V		430	mW
P_DDI	Supply power dissipation: VDDI ⁽²⁾	VDDI = 1.95 V		121	mW
P_OFFSET	Supply power dissipation: VOFFSET	VOFFSET = 8.75 V		307	mW
P_BIAS	Supply power dissipation: VBIAS	VBIAS = 16.5 V		25	mW
P_RESET	Supply power dissipation: VRESET	VRESET = -10.5 V		168	mW
P_TOTAL	Supply power dissipation: Total			1045	mW
LVCMOS INPUT
V_IH	High-level input voltage ⁽³⁾		0.7 x V_DD	VDD + 0.3	V
V_IL	Low-level input voltage ⁽³⁾		-0.3	0.3 x V_DD	V
V_IH(AC)	AC input high voltage ⁽³⁾		0.8 × V_DD	V_DD + 0.3	V
V_IL(AC)	AC input low voltage ⁽³⁾		–0.3	0.2 × V_DD	V
V_Hyst	Input Hysteresis ⁽³⁾	See Figure 5-9	0.1 × V_DD	0.4 × V_DD	V
I_IL	Low–level input current ⁽³⁾	VDD = 1.95 V; V_I = 0 V	–100		nA
I_IH	High–level input current ⁽³⁾	VDD = 1.95 V; V_I = 1.95 V		135	uA
LVCMOS OUTPUT
V_OH	DC output high voltage ⁽⁴⁾	I_OH = -2mA	0.8 × V_DD		V
V_OL	DC output low voltage ⁽⁴⁾	I_OL = 2mA		0.2 × V_DD	V
I_OZ	High impedance output current	VDD = 1.95V		10	µA
CAPACITANCE
C_IN	Input capacitance LVCMOS	F = 1 MHz		10	pF
C_IN	Input capacitance SubLVDS	F = 1 MHz		20	pF
C_OUT	Output capacitance	F = 1 MHz		13	pF
C_TEMP	Temperature sense diode capacitance	F = 1 MHz		20	pF

(1) Device electrical characteristics are over Recommended Operating Conditions unless otherwise noted.

(2) Supply power dissipation based on non–compressed commands and data.

(3) LPSDR input specification are for pin DMD_DEN_ARSTZ.

(4) LPSDR output specification is for pins LS_RDATA_A and LS_RDATA_B.