ZHCSIG0G April 2016 – May 2019 DLP5531-Q1
PRODUCTION DATA.
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
SUPPLY VOLTAGE RANGE(3) | ||||||
VDD | Supply voltage for LVCMOS core logic
Supply voltage for LPSDR low-speed interface |
1.7 | 1.8 | 1.95 | V | |
VDDI | Supply voltage for SubLVDS receivers | 1.7 | 1.8 | 1.95 | V | |
VOFFSET | Supply voltage for HVCMOS and micromirror electrode(4) | 8.25 | 8.5 | 8.75 | V | |
VBIAS | Supply voltage for mirror electrode | 15.5 | 16 | 16.5 | V | |
VRESET | Supply voltage for micromirror electrode | –9.5 | –10 | –10.5 | V | |
| VDDI–VDD | | Supply voltage delta (absolute value)(5) | 0.3 | V | |||
| VBIAS–VOFFSET | | Supply voltage delta (absolute value)(6) | 8.75 | V | |||
CLOCK FREQUENCY | ||||||
ƒclock | Clock frequency for low speed interface LS_CLK | 120 | MHz | |||
ƒclock | Clock frequency for high speed interface DCLK(7) | 600 | MHz | |||
Duty cycle distortion DCLK | 44% | 56% | ||||
SUBLVDS INTERFACE(7) | ||||||
| VID | | SubLVDS input differential voltage (absolute value,
see Figure 6, Figure 7) |
150 | 250 | 350 | mV | |
VCM | Common mode voltage (see Figure 6, Figure 7) | 700 | 900 | 1100 | mV | |
VSUBLVDS | SubLVDS voltage (see Figure 6, Figure 7) | 575 | 1225 | mV | ||
ZLINE | Line differential impedance (PWB/trace) | 90 | 100 | 110 | Ω | |
ZIN | Internal differential termination resistance (see Figure 8) | 80 | 100 | 120 | Ω | |
TEMPERATURE DIODE | ||||||
ITEMP_DIODE | Max current source into Temperature Diode(8) | 120 | µA | |||
ENVIRONMENTAL | ||||||
TARRAY | Operating DMD array temperature(9)(10)(11) | –40 | 105 | °C | ||
ILLUV | Illumination, wavelength < 395 nm(10) | 2 | mW/cm2 | |||
ILLOVERFILL | Illumination overfill maximum heat load per side.(12)(13) | TARRAY <= 75°C | 40 | mW/mm2 | ||
ILLOVERFILL | Illumination overfill maximum heat load per side.(12)(13) | TARRAY > 75°C | 29 | mW/mm2 |