6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
SUPPLY VOLTAGES |
|
MIN |
MAX |
UNIT |
VCC |
Supply voltage for LVCMOS core logic (2) |
–0.5 |
4 |
V |
VCCI |
Supply voltage for LVDS receivers (2) |
–0.5 |
4 |
V |
VOFFSET |
Supply voltage for HVCMOS and micromirror electrode (2) (3) |
–0.5 |
9 |
V |
VBIAS |
Supply voltage for micromirror electrode (2) |
–0.5 |
17 |
V |
VRESET |
Supply voltage for micromirror electrode (2) |
–11 |
0.5 |
V |
| VCC – VCCI | |
Supply voltage delta (absolute value) (4) |
|
0.3 |
V |
| VBIAS – VOFFSET | |
Supply voltage delta (absolute value) (5) |
|
8.75 |
V |
INPUT VOLTAGES |
|
Input voltage for all other LVCMOS input pins (2) |
–0.5 |
VCC + 0.15 |
V |
|
Input voltage for all other LVDS input pins (2) (6) |
–0.5 |
VCCI + 0.15 |
V |
| VID | |
Input differential voltage (absolute value) (7) |
|
700 |
mV |
IID |
Input differential current (7) |
|
7 |
mA |
CLOCKS |
ƒclock |
Clock frequency for LVDS interface, DCLK (all channels) |
|
460 |
MHz |
ENVIRONMENTAL |
TCASE |
Case temperature: operational (8) (9) |
–20 |
90 |
ºC |
Case temperature: non–operational (9) |
–40 |
90 |
ºC |
|
Dew Point (Operating and non-Operating) |
|
81 |
ºC |
(1) Stresses beyond those listed under
Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device is not implied at these or any other conditions beyond those indicated under
Recommended Operating Conditions . Exposure above
Recommended Operating Conditions for extended periods may affect device reliability.
(2) All voltages are referenced to common ground VSS. Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected
(3) VOFFSET supply transients must fall within specified voltages.
(4) To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
(5) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. Refer to
Power Supply Recommendations for additional information.
(6) This maximum LVDS input voltage rating applies when each input of a differential pair is at the same voltage potential. .
(7) LVDS differential inputs must not exceed the specified limit or damage may result to the internal termination resistors
(8) Exposure of the DMD simultaneously to any combination of the maximum operating conditions for case temperature, differential temperature, or illumination power density will reduce the device lifetime.
(9) DMD Temperature is the worst-case of any test point shown in
Figure 15, or the active array as calculated by the
Micromirror Array Temperature Calculation , or any point along the Window Edge as defined in
Figure 15. The locations of thermal test points TP2, TP3, TP4 and TP5 in
Figure 15 are intended to measure the highest window edge temperature. If a particular application causes another point on the window edge to be at a higher temperature, a test point should be added to that location.
6.2 Storage Conditions
applicable before the DMD is installed in the final product
|
|
MIN |
MAX |
UNIT |
Tstg |
DMD Storage Temperature |
–40 |
85 |
°C |
TDP |
Storage Dew Point - long-term (1) |
|
24 |
°C |
Storage Dew Point - short-term (2) |
|
28 |
°C |
(1) Long-term is defined as the usable life of the device.
(2) Dew points beyond the specified long-term dew point are for short-term conditions only, where short-term is defined as less than 60 cumulative days over the usable life of the device (operating, non-operating, or storage).
6.3 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±2000 |
V |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
|
|
MIN |
NOM |
MAX |
UNIT |
SUPPLY VOLTAGES(1) (2) |
VCC |
Supply voltage for LVCMOS core logic |
3.15 |
3.3 |
3.45 |
V |
VCCI |
Supply voltage for LVDS receivers |
3.15 |
3.3 |
3.45 |
V |
VOFFSET |
Supply voltage for HVCMOS and micromirror electrodes(2) |
8.25 |
8.5 |
8.75 |
V |
VBIAS |
Supply voltage for micromirror electrodes |
15.5 |
16 |
16.5 |
V |
VRESET |
Supply voltage for micromirror electrodes |
–9.5 |
–10 |
–10.5 |
V |
|VCCI–VCC| |
Supply voltage delta (absolute value) (3) |
|
|
0.3 |
V |
|VBIAS–VOFFSET| |
Supply voltage delta (absolute value)(4) |
|
|
8.75 |
V |
LVCMOS PINS |
VIH |
High level Input voltage (5) |
1.7 |
2.5 |
VCC + 0.15 |
V |
VIL |
Low level Input voltage(5) |
– 0.3 |
|
0.7 |
V |
IOH |
High level output current at VOH = 2.4 V |
|
|
–20 |
mA |
IOL |
Low level output current at VOL = 0.4 V |
|
|
15 |
mA |
TPWRDNZ |
PWRDNZ pulse width(6) |
10 |
|
|
ns |
SCP INTERFACE(7) |
ƒclock |
SCP clock frequency(8) |
|
|
500 |
kHz |
tSCP_SKEW |
Time between valid SCPDI and rising edge of SCPCLK(9) |
–800 |
|
800 |
ns |
tSCP_DELAY |
Time between valid SCPDO and rising edge of SCPCLK(9) |
|
|
700 |
ns |
tSCP_BYTE_INTERVAL |
Time between consecutive bytes |
1 |
|
|
µs |
tSCP_NEG_ENZ |
Time between falling edge of SCPENZ and the first rising edge of SCPCLK |
30 |
|
|
ns |
tSCP_PW_ENZ |
SCPENZ inactive pulse width (high level) |
1 |
|
|
µs |
tSCP_OUT_EN |
Time required for SCP output buffer to recover after SCPENZ (from tri-state) |
|
|
1.5 |
ns |
ƒclock |
SCP circuit clock oscillator frequency (10) |
9.6 |
|
11.1 |
MHz |
LVDS INTERFACE |
|
ƒclock |
Clock frequency for LVDS interface, DCLK (all channels) |
|
|
400 |
MHz |
|VID| |
Input differential voltage (absolute value)(11) |
100 |
400 |
600 |
mV |
VCM |
Common mode (11) |
|
1200 |
|
mV |
VLVDS |
LVDS voltage(11) |
0 |
|
2000 |
mV |
tLVDS_RSTZ |
Time required for LVDS receivers to recover from PWRDNZ |
|
|
10 |
ns |
ZIN |
Internal differential termination resistance |
95 |
|
105 |
Ω |
ZLINE |
Line differential impedance (PWB/trace) |
90 |
100 |
110 |
Ω |
ENVIRONMENTAL (12) |
|
|
|
|
|
TDMD |
DMD temperature–operational, long-term (13) (14) (18) |
0 |
|
40 to 70(14) |
°C |
DMD temperature – operational, short-term |
–20 |
|
75 |
°C |
TWINDOW |
Window temperature – operational(15) |
|
|
90 |
°C |
TCERAMIC-WINDOW-DELTA |
Delta ceramic-to-window temperature -operational (15) (16) |
|
|
30 |
°C |
|
Long-term dew point (operational, non-operational, long-term) |
|
|
24 |
°C |
|
Short-term dew point(18) (19) (operational, non-operational, short-term) |
|
|
28 |
°C |
ILLUV |
Illumination, wavelength < 420 nm |
|
|
0.68 |
mW/cm2 |
ILLVIS |
Illumination, wavelengths between 420 and 700 nm |
|
|
Thermally Limited(17) |
mW/cm2 |
ILLIR |
Illumination, wavelength > 700 nm |
|
|
10 |
mW/cm2 |
(1) Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max voltages.
(3) To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
(4) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. Refer to Power Supply Recommendations for additional information.
(5) Tester Conditions for VIH and VIL:
Frequency = 60MHz. Maximum Rise Time = 2.5 ns at (20% to 80%)
Frequency = 60MHz. Maximum Fall Time = 2.5 ns at (80% to 20%)
(6) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tri-states the SCPDO output pin.
(7) For all Serial Communications Port (SCP) operations, DCLK_A and DCLK_B are required.
(8) The SCP clock is a gated clock. Duty cycle shall be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(10) SCP internal oscillator is specified to operate all SCP registers. For all SCP operations, DCLK is required.
(12) Optimal, long-term performance and optical efficiency of the Digital Micromirror Device (DMD) can be affected by various application parameters, including illumination spectrum, illumination power density, micromirror landed duty-cycle, ambient temperature (storage and operating), DMD temperature, ambient humidity (storage and operating), and power on or off duty cycle. TI recommends that application-specific effects be considered as early as possible in the design cycle.
(13) DMD Temperature is the worst-case of any test point shown in
Figure 15, or the active array as calculated by the
Micromirror Array Temperature Calculation , or any point along the Window Edge as defined in
Figure 15. The locations of thermal test points TP2, TP3, TP4 and TP5 in
Figure 15 are intended to measure the highest window edge temperature. If a particular application causes another point on the window edge to be at a higher temperature, a test point should be added to that location.
(14) Per
Figure 1, the maximum operational case temperature should be derated based on the micromirror landed duty cycle that the DMD experiences in the end application. Refer to
Micromirror Landed-on/Landed-Off Duty Cycle for a definition of micromirror landed duty cycle.
(15) Window temperature as measured at thermal test points TP2, TP3, TP4 and TP5 in
Figure 15.The locations of thermal test points TP2, TP3, TP4 and TP5 in
Figure 15 are intended to measure the highest window edge temperature. If a particular application causes another point on the window edge to be at a higher temperature, a test point should be added to that location.
(16) Ceramic package temperature as measured at test point 1 (TP1) in
Figure 15.
(18) Long-term is defined as the average over the usable life.
(19) Dew points beyond the specified long-term dew point (operating, non-operating, or storage) are for short-term conditions only, where short-term is defined as< 60 cumulative days over the usable life of the device.
6.5 Thermal Information
THERMAL METRIC(1) |
|
DLP6500FYE |
|
UNIT |
MIN |
FYE (350) |
MAX |
Active Area-to-Case Ceramic Thermal resistance (1) |
|
|
0.6 |
°C/W |
(1) The DMD is designed to conduct absorbed and dissipated heat to the back of the package where it can be removed by an appropriate heat sink. The heat sink and cooling system must be capable of maintaining the package within the temperature range specified in the
Recommended Operating Conditions . The total heat load on the DMD is largely driven by the incident light absorbed by the active area; although other contributions include light energy absorbed by the window aperture and electrical power dissipation of the array. Optical systems should be designed to minimize the light energy falling outside the window clear aperture since any additional thermal load in this area can significantly degrade the reliability of the device.
6.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER |
DESCRIPTION |
TEST CONDITIONS(1) |
MIN |
TYP |
MAX |
UNIT |
VOH |
High-level output voltage |
VCC = 3.3 V, IOH = –20 mA |
2.4 |
|
|
V |
VOL |
Low level output voltage |
VCC = 3.45 V, IOL = 15 mA |
|
|
0.4 |
V |
IIH |
High–level input current(2) (3) |
VCC = 3.45 V , VI = VCC |
|
|
250 |
µA |
IlL |
Low level input current |
VCC = 3.45 V, VI = 0 |
–250 |
|
|
µA |
IOZ |
High–impedance output current |
VCC = 3.45 V |
|
|
10 |
µA |
CURRENT |
ICC |
Supply current (4) |
VCC = 3.6 V |
|
|
1076 |
mA |
ICCI |
VCCI = 3.6 V |
|
|
518 |
IOFFSET |
Supply current (5) |
VOFFSET = 8.75 V |
|
|
4 |
mA |
IBIAS |
VBIAS = 16.5 V |
|
|
14 |
IRESET |
Supply current |
VRESET = –10.5 V |
|
|
11 |
mA |
ITOTAL |
Total Sum |
|
|
1623 |
POWER |
PCC |
Supply power dissipation |
VCC = 3.6 V |
|
|
3874 |
mW |
PCCI |
VCCI = 3.6 V |
|
|
1865 |
POFFSET |
VOFFSET = 8.75 V |
|
|
35 |
PBIAS |
VBIAS = 16.5 V |
|
|
231 |
PRESET |
VRESET = –10.5 V |
|
|
116 |
PTOTAL |
Supply power dissipation(6) |
Total Sum |
|
|
6300 |
CAPACITANCE |
CI |
Input capacitance |
ƒ = 1 MHz |
|
|
10 |
pF |
CO |
Output capacitance |
ƒ = 1 MHz |
|
|
10 |
pF |
CM |
Reset group capacitance MBRST(14:0) |
ƒ = 1 MHz 1920 × 72 micromirrors |
330 |
|
390 |
pF |
(1) All voltages are referenced to common ground VSS. Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected.
(2) Applies to LVCMOS input pins only. Does not apply to LVDS pins and MBRST pins.
(3) LVCMOS input pins utilize an internal 18000 Ω passive resistor for pull-up and pull-down configurations. Refer to
Pin Configuration and Functions to determine pull-up or pull-down configuration used.
(4) To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
(5) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit.
6.7 Timing Requirements
Over Recommended Operating Conditions unless otherwise noted.
|
DESCRIPTION(1) |
MIN |
TYP |
MAX |
UNIT |
SCP INTERFACE(2) |
tr |
Rise time |
20% to 80% |
|
|
200 |
ns |
tƒ |
Fall time |
80% to 20% |
|
|
200 |
ns |
LVDS INTERFACE(2) |
tr |
Rise time |
20% to 80% |
100 |
|
400 |
ps |
tƒ |
Fall time |
80% to 20% |
100 |
|
400 |
ps |
LVDS CLOCKS(3) |
tc |
Cycle time |
DCLK_A, 50% to 50% |
2.5 |
|
|
ns |
DCLK_B, 50% to 50% |
2.5 |
|
|
tw |
Pulse duration |
DCLK_A, 50% to 50% |
1.19 |
1.25 |
|
ns |
DCLK_B, 50% to 50% |
1.19 |
1.25 |
|
LVDS INTERFACE(3) |
tsu |
Setup time |
D_A(15:0) before rising or falling edge of DCLK_A |
0.1 |
|
|
ns |
D_B(15:0) before rising or falling edge of DCLK_B |
0.1 |
|
|
tsu |
Setup time |
SCTRL_A before rising or falling edge of DCLK_A |
0.1 |
|
|
ns |
SCTRL_B before rising or falling edge of DCLK_B |
0.1 |
|
|
th |
Hold time |
D_A(15:0) after rising or falling edge of DCLK_A |
0.4 |
|
|
ns |
D_B(15:0) after rising or falling edge of DCLK_B |
0.4 |
|
|
th |
Hold time |
SCTRL_A after rising or falling edge of DCLK_A |
0.3 |
|
|
ns |
SCTRL_B after rising or falling edge of DCLK_B |
0.3 |
|
|
LVDS INTERFACE(4) |
tskew |
Skew time |
Channel B relative to Channel A (4) |
Channel A includes the following LVDS pairs: DCLK_AP and DCLK_AN SCTRL_AP and SCTRL_AN D_AP(15:0) and D_AN(15:0) |
–1.25 |
|
1.25 |
ns |
Channel B includes the following LVDS pairs: DCLK_BP and DCLK_BN SCTRL_BP and SCTRL_BN D_BP(15:0) and D_BN(15:0) |
Timing Requirements
The data sheet provides timing at the device pin. For output timing analysis, the tester pin electronics and its transmission line effects must be taken into account. Figure 2 shows an equivalent test load circuit for the output under test. The load capacitance value stated is only for characterization and measurement of AC timing signals. This load capacitance value does not indicate the maximum load the device is capable of driving.
Timing reference loads are not intended as a precise representation of any particular system environment or depiction of the actual load presented by a production test. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Refer to the Application and Implementation section.
Figure 2. Test Load Circuit
Not to scale.
Refer to SCP Interface section of the Recommended Operating Conditions table.
Figure 3. SCP Timing Parameters
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Refer to Pin Configuration and Functions for list of LVDS pins.
Figure 4. LVDS Voltage Definitions (References)
Not to scale.
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Figure 5. LVDS Voltage Parameters
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Refer to Pin Configuration and Functions for list of LVDS pins.
Figure 6. LVDS Equivalent Input Circuit
Not to scale.
Refer to Pin Configuration and Functions for list of LVDS pins and SCP pins..
Figure 7. Rise Time and Fall Time
Not to scale.
Refer to LVDS INTERFACE section in the
Timing Requirements table.
Figure 8. Timing Requirement Parameter Definitions
Not to scale.
Refer to LVDS INTERFACE section in the
Timing Requirements table.
Figure 9. LVDS Interface Channel Skew Definition
6.8 Typical Characteristics
The DLP6500FYE DMD is controlled by the DLPC900 controller. The controller has two modes of operation. The first is Video mode where the video source is displayed on the DMD. The second is Pattern mode, where the patterns are pre-stored in flash memory and then streamed to the DMD. The allowed DMD pattern rate depends on which mode and bit-depth is selected.
Table 1. Bit Depth versus Pattern Rate
BIT DEPTH |
VIDEO MODE RATE (Hz) |
PATTERN MODE RATE (Hz) |
1 |
2880 |
9523 |
2 |
1440 |
3289 |
3 |
960 |
2638 |
4 |
720 |
1364 |
5 |
480 |
823 |
6 |
480 |
672 |
7 |
360 |
500 |
8 |
247 |
247 |
6.9 System Mounting Interface Loads
PARAMETER |
MIN |
NOM |
MAX |
UNIT |
Maximum system mounting interface load to be applied to the:
- Thermal Interface area
- Electrical Interface areas
|
(See Figure 10) |
|
|
11.30 |
Kg |
Maximum Load 22.64 Applied per condition 2 |
|
|
|
|
|
- Thermal Interface area
- Electrical Interface areas
|
(See Figure 10) |
|
|
0 |
Kg |
22.60 |
6.10 Micromirror Array Physical Characteristics
|
|
VALUE |
UNIT |
M |
Number of active columns |
|
See Figure 11 |
1920 |
micromirrors |
N |
Number of active rows |
|
1080 |
micromirrors |
P |
Micromirror (pixel) pitch |
|
7.56 |
µm |
|
Micromirror active array width |
M × P |
14.5152 |
mm |
|
Micromirror active array height |
N × P |
8.1648 |
mm |
|
Micromirror active border |
Pond of micromirror (POM)(1) |
|
14 |
micromirrors /side |
(1) The structure and qualities of the border around the active array includes a band of partially functional micromirrors called the POM. These micromirrors are structurally and/or electrically prevented from tilting toward the bright or ON state, but still require an electrical bias to tilt toward OFF.
6.11 Micromirror Array Optical Characteristics
See Optical Interface and System Image Quality for important information
PARAMETER |
CONDITIONS |
MIN |
NOM |
MAX |
UNIT |
α |
Micromirror tilt angle |
DMD landed state (1) |
|
12 |
|
° |
β |
Micromirror tilt angle tolerance(1) (2) (3) (4) (5) |
|
–1 |
|
1 |
° |
|
Micromirror tilt direction(5) (6) (7) |
|
44 |
45 |
46 |
° |
|
Number of out-of-specification micromirrors (8) |
Adjacent micromirrors |
|
|
0 |
micromirrors |
Non-adjacent micromirrors |
|
|
10 |
|
Micromirror crossover time (9) (10) |
Typical performance |
|
2.5 |
|
μs |
|
Micromirror switching time (10) |
Typical performance |
|
5 |
|
μs |
|
DMD photopic efficiency within the wavelength range 420 nm to 700 nm (11) |
|
|
66% |
|
|
(1) Measured relative to the plane formed by the overall micromirror array.
(2) Additional variation exists between the micromirror array and the package datums.
(3) Represents the landed tilt angle variation relative to the nominal landed tilt angle.
(4) Represents the variation that can occur between any two individual micromirrors, located on the same device or located on different devices.
(5) For some applications, it is critical to account for the micromirror tilt angle variation in the overall system optical design. With some system optical designs, the micromirror tilt angle variation within a device may result in perceivable non-uniformities in the light field reflected from the micromirror array. With some system optical designs, the micromirror tilt angle variation between devices may result in colorimetry variations, system efficiency variations or system contrast variations.
(6) When the micromirror array is landed (not parked), the tilt direction of each individual micromirror is dictated by the binary contents of the CMOS memory cell associated with each individual micromirror. A binary value of 1 results in a micromirror landing in the ON State direction. A binary value of 0 results in a micromirror landing in the OFF State direction.
(8) An out-of-specification micromirror is defined as a micromirror that is unable to transition between the two landed states within the specified Micromirror Switching Time.
(9) Micromirror crossover time is primarily a function of the natural response time of the micromirrors.
(10) Performance as measured at the start of life.
(11) Efficiency numbers assume 24-degree illumination angle, F/2.4 illumination and collection cones, uniform source spectrum, and uniform pupil illumination. Efficiency numbers assume 100% electronic mirror duty cycle and do not include optical overfill loss. Note that this number is specified under conditions described above and deviations from the specified conditions could result in decreased efficiency.
6.12 Window Characteristics
PARAMETER(1) |
CONDITIONS |
MIN |
NOM |
MAX |
UNIT |
Window material designation S600 |
Corning Eagle XG |
|
|
|
|
Window refractive index |
at wavelength 546.1 nm |
|
1.5119 |
|
|
Window aperture |
See (2) |
|
|
|
|
Illumination overfill |
Refer to Illumination Overfill |
|
|
|
|
Window transmittance, single–pass through both surfaces and glass (3) |
Minimum within the wavelength range 420 nm to 680 nm. Applies to all angles 0° to 30° AOI. |
97% |
|
|
|
Average over the wavelength range 420 nm to 680 nm. Applies to all angles 30° to 45° AOI. |
97% |
|
|
|
(2) For details regarding the size and location of the window aperture, see the package mechanical characteristics listed in the Mechanical ICD in the Mechanical, Packaging, and Orderable Information section,
(3) See the TI application report
DLPA031,
Wavelength Transmittance Considerations for DLP™ DMD Window.
6.13 Chipset Component Usage Specification
The DLP6500FYE is a component of one or more DLP® chipsets. Reliable function and operation of the DLP6500FYE requires that it be used in conjunction with the other components of the applicable DLP chipset, including those components that contain or implement TI DMD control technology. TI DMD control technology is the TI technology and devices for operating or controlling a DLP DMD.