ZHCSC07E December   2013  – March 2019 DLPC2607

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Typical Current and Power Dissipation
    6. 6.6  I/O Characteristics
    7. 6.7  Internal Pullup and Pulldown Characteristics
    8. 6.8  Parallel I/F Frame Timing Requirements
    9. 6.9  Parallel I/F General Timing Requirements
    10. 6.10 Parallel I/F Maximum Parallel Interface Horizontal Line Rate
    11. 6.11 BT.656 I/F General Timing Requirements
    12. 6.12 100- to 120-Hz Operational Limitations
    13. 6.13 Flash Interface Timing Requirements
    14. 6.14 DMD Interface Timing Requirements
    15. 6.15 mDDR Memory Interface Timing Requirements
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Parallel Bus Interface
      2. 7.3.2 100- to 120-Hz 3-D Display Operation
    4. 7.4 Programming
      1. 7.4.1 Serial Flash Interface
      2. 7.4.2 Serial Flash Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 System Functional Modes
      2. 8.2.2 Design Requirements
        1. 8.2.2.1 Reference Clock
        2. 8.2.2.2 mDDR DRAM Compatibility
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Hot-Plug Usage
        2. 8.2.3.2 Maximum Signal Transition Time
        3. 8.2.3.3 Configuration Control
        4. 8.2.3.4 White Point Correction Light Sensor
      4. 8.2.4 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 System Power Considerations
    2. 9.2 System Power-Up and Power-Down Sequence
    3. 9.3 System Power I/O State Considerations
    4. 9.4 Power-Up Initialization Sequence
    5. 9.5 Power-Good (PARK) Support
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  Internal ASIC PLL Power
      2. 10.1.2  General Handling Guidelines for Unused CMOS-Type Pins
      3. 10.1.3  SPI Signal Routing
      4. 10.1.4  mDDR Memory and DMD Interface Considerations
      5. 10.1.5  PCB Design
      6. 10.1.6  General PCB Routing (Applies to All Corresponding PCB Signals)
      7. 10.1.7  Maximum, Pin-to-Pin, PCB Interconnects Etch Lengths
      8. 10.1.8  I/F Specific PCB Routing
      9. 10.1.9  Number of Layer Changes
      10. 10.1.10 Stubs
      11. 10.1.11 Termination Requirements:
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 器件命名规则
        1. 11.1.2.1 器件标记
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12机械、封装和可订购信息
    1. 12.1 封装选项附录
      1. 12.1.1 封装信息

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • ZVB|176
散热焊盘机械数据 (封装 | 引脚)

10.1.8 I/F Specific PCB Routing

Table 11. High-Speed PCB Signal Routing Matching Requirements(1)(2)(3)

SIGNAL INTERCONNECT TOPOLOGY
IF SINGLE GROUP REFERENCE SIGNAL MAX MISMATCH UNIT
DMD DMD_D(14:0), DMD_TRC,
DMD_SCTRL, DMD_LOADB,
DMD_OEZ 		DMD_DCLK ±500
(±12.7)		 mil
(mm)
DMD_DAD_STRB, DMD_DAD_BUS DMD_DCLK ±750
(±19.05)		 mil
(mm)
DMD_SAC_BUS DMD_SAC_CLK ±750
(±19.05)		 mil
(mm)
DMD_SAC_CLK DMD_DCLK ±500
(±12.7)		 mil
(mm)
mDDR: MEM0_CLK_P MEM0_CLK_N ±150
(±3.81)		 mil
(mm)
Read/ Write Data Lower Byte:
MEM0_LDM and MEM0_DQ(7:0) 38.1 max		 MEM0_LDQS ±300
(±7.62)		 mil
(mm)
Read/ Write Data Upper Byte:
MEM0_UDM and MEM0_DQ(15:8) 		MEM0_UDQS ±300
(±7.62)		 mil
(mm)
Address and control:
MEM0_A(12:0), MEM0_BA(1:0),
MEM0_RASZ , MEM0_CASZ,
MEM0_WEZ, MEM0_CSZ,
MEM0_CKE 		MEM0_CLK_P/
MEM0_CLK_N		 ±1000
(±25.4)		 mil
(mm)
Data strobes:
MEM0_LDQS and MEM0_UDQS 		MEM0_CLK_P/
MEM0_CLK_N		 ±300
(±7.62)		 mil
(mm)
(1) These values apply to PCB routing only. They do not include any internal package routing mismatch associated with the DLPC2607 device, DMD, or mDDR memory.
(2) DMD data and control lines are DDR, whereas DMD_SAC and DMD_DAD lines are single data rate. Matching the DDR lines is more critical and takes precedence over matching single data rate lines.
(3) mDDR data, mask, and strobe lines are DDR, whereas address and control are single data rate. Matching the DDR lines is more critical and takes precedence over matching single data rate lines.
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