ZHCSLL4 December   2021 DP83TC814R-Q1 , DP83TC814S-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Diagnostic Tool Kit
        1. 8.3.1.1 Signal Quality Indicator
        2. 8.3.1.2 Electrostatic Discharge Sensing
        3. 8.3.1.3 Time Domain Reflectometry
        4. 8.3.1.4 Voltage Sensing
        5. 8.3.1.5 BIST and Loopback Modes
          1. 8.3.1.5.1 Data Generator and Checker
          2. 8.3.1.5.2 xMII Loopback
          3. 8.3.1.5.3 PCS Loopback
          4. 8.3.1.5.4 Digital Loopback
          5. 8.3.1.5.5 Analog Loopback
          6. 8.3.1.5.6 Reverse Loopback
      2. 8.3.2 Compliance Test Modes
        1. 8.3.2.1 Test Mode 1
        2. 8.3.2.2 Test Mode 2
        3. 8.3.2.3 Test Mode 4
        4. 8.3.2.4 Test Mode 5
    4. 8.4 Device Functional Modes
      1. 8.4.1  Power Down
      2. 8.4.2  Reset
      3. 8.4.3  Standby
      4. 8.4.4  Normal
      5. 8.4.5  Media Dependent Interface
        1. 8.4.5.1 100BASE-T1 Master and 100BASE-T1 Slave Configuration
        2. 8.4.5.2 Auto-Polarity Detection and Correction
        3. 8.4.5.3 Jabber Detection
        4. 8.4.5.4 Interleave Detection
      6. 8.4.6  MAC Interfaces
        1. 8.4.6.1 Media Independent Interface
        2. 8.4.6.2 Reduced Media Independent Interface
        3. 8.4.6.3 Reduced Gigabit Media Independent Interface
      7. 8.4.7  Serial Management Interface
      8. 8.4.8  Direct Register Access
      9. 8.4.9  Extended Register Space Access
      10. 8.4.10 Write Address Operation
        1. 8.4.10.1 MMD1 - Write Address Operation
      11. 8.4.11 Read Address Operation
        1. 8.4.11.1 MMD1 - Read Address Operation
      12. 8.4.12 Write Operation (No Post Increment)
        1. 8.4.12.1 MMD1 - Write Operation (No Post Increment)
      13. 8.4.13 Read Operation (No Post Increment)
        1. 8.4.13.1 MMD1 - Read Operation (No Post Increment)
      14. 8.4.14 Write Operation (Post Increment)
        1. 8.4.14.1 MMD1 - Write Operation (Post Increment)
      15. 8.4.15 Read Operation (Post Increment)
        1. 8.4.15.1 MMD1 - Read Operation (Post Increment)
    5. 8.5 Programming
      1. 8.5.1 Strap Configuration
      2. 8.5.2 LED Configuration
      3. 8.5.3 PHY Address Configuration
    6. 8.6 Register Maps
      1. 8.6.1 Register Access Summary
      2. 8.6.2 DP83TC814 Registers
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Physical Medium Attachment
          1. 9.2.1.1.1 Common-Mode Choke Recommendations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Signal Traces
      2. 11.1.2 Return Path
      3. 11.1.3 Metal Pour
      4. 11.1.4 PCB Layer Stacking
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

9.2.1 Design Requirements

For these typical applications, use the following as design parameters from the table below. Refer to Power Supply Recommendations section for detailed connection diagram.

Table 9-1 Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
VDDIO 1.8 V, 2.5 V, or 3.3 V
VDDMAC 1.8 V, 2.5 V, or 3.3 V
VDDA 3.3 V
Decoupling capacitors VDDIO(2)(3) 0.01 μF
(Optional) ferrite bead for VDDIO(3) 1 kΩ at 100 MHz (BLM18KG601SH1D)
Decoupling capacitors VDDMAC(2) 0.01 μF, 0.47 μF
Ferrite bead for VDDMAC 1 kΩ at 100 MHz (BLM18KG601SH1D)
Decoupling capacitors VDDA (2) 0.01 μF, 0.47 μF
(Optional) ferrite bead for VDDA 1 kΩ at 100 MHz (BLM18KG601SH1D)
Decoupling capacitors

VDDA(pin 7)

 0.1 μF
DC Blocking Capacitors (2) 0.1 μF
Common-Mode Choke 200 μH
Common Mode Termination Resistors(1) 1 kΩ
MDI Coupling Capacitor (2) 4.7 nF
ESD Shunt(2) 100 kΩ
Reference Clock 25 MHz
(1) 1% tolerance components are recommended.
(2) 10% tolerance components are recommended.
(3) If VDDIO is separate from VDDMAC then additional ferrite bead and 0.47μF capacitor will be required on VDDIO.
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