ZHCSJ33F December 2015 – May 2019 DRA745 , DRA746 , DRA750 , DRA756
PRODUCTION DATA.
Table 5-19 summarizes the DC electrical characteristics for Dual Voltage LVCMOS Buffers.
PARAMETER | MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|---|
1.8-V Mode | ||||||
VIH | Input high-level threshold | 0.65*VDDS | V | |||
VIL | Input low-level threshold | 0.35*VDDS | V | |||
VHYS | Input hysteresis voltage | 100 | mV | |||
VOH | Output high-level threshold (IOH = 2 mA) | VDDS-0.45 | V | |||
VOL | Output low-level threshold (IOL = 2 mA) | 0.45 | V | |||
IDRIVE | Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V | 6 | mA | |||
IIN | Input current at each I/O pin | 16 | µA | |||
IOZ | IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 16 | µA | |||
IIN with pulldown enabled | Input current at each I/O pin with weak pulldown enabled measured when PAD = VDDS | 50 | 120 | 210 | µA | |
IIN with pullup enabled | Input current at each I/O pin with weak pullup enabled measured when PAD = 0 | 60 | 120 | 200 | µA | |
CPAD | Pad capacitance (including package capacitance) | 4 | pF | |||
ZO | Output impedance (drive strength) | 40 | Ω | |||
3.3-V Mode | ||||||
VIH | Input high-level threshold | 2 | V | |||
VIL | Input low-level threshold | 0.8 | V | |||
VHYS | Input hysteresis voltage | 200 | mV | |||
VOH | Output high-level threshold (IOH =100 µA) | VDDS-0.2 | V | |||
VOL | Output low-level threshold (IOL = 100 µA) | 0.2 | V | |||
IDRIVE | Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V | 6 | mA | |||
IIN | Input current at each I/O pin | 65 | µA | |||
IOZ | IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 65 | µA | |||
IIN with pulldown enabled | Input current at each I/O pin with weak pulldown enabled measured when PAD = VDDS | 40 | 100 | 200 | µA | |
IIN with pullup enabled | Input current at each I/O pin with weak pullup enabled measured when PAD = 0 | 10 | 100 | 290 | µA | |
CPAD | Pad capacitance (including package capacitance) | 4 | pF | |||
ZO | Output impedance (drive strength) | 40 | Ω |