ZHCSI52G August 2016 – March 2019 DRA780 , DRA781 , DRA782 , DRA783 , DRA785 , DRA786 , DRA787 , DRA788
PRODUCTION DATA.
When reading from NAND flash memories, some level of error-correction is required. In the case of NAND modules with no internal correction capability, sometimes referred to as bare NANDs, the correction process is delegated to the memory controller.
The ELM supports the following features:
For more information, see section Error Location Module (ELM) in chapter Memory Subsystem of the device TRM.