2 修订历史记录
Changes from July 16, 2018 to May 15, 2019 (from D Revision (July 2018) to E Revision)
- Added clarification note regarding X777 part number in Table 3-1, Device ComparisonGo
- Added clarification notes for EMU[1:0] connections to Table 4-21, GPIOs Signal Descriptions and Table 4-26, Debug Signal DescriptionsGo
- Added clarification note regarding TSHUT feature in Section 5.4, Recommended Operating ConditionsGo
- Updated Table 5-2, AVS and ABB Requirements per vdd_* SupplyGo
- Updated OPP_HIGH voltage range in note (6) under Table 5-3, Voltage Domains Operating Performance PointsGo
- Added Ivpp specification in Table 5-14, Recommended Operating Conditions for OTP eFuse ProgrammingGo
- Updated EMIF_DLL_FCLK max rate in Table 5-28, DLL CharacteristicsGo
- Added MII_TXER timing to Section 5.10.6.19.1, GMAC MII TimingsGo
- Updated Figure 5-72, GMAC MDIO diagrams and MDIO7 parameter values in Table 5-99, Switching Characteristics Over Recommended Operating Conditions for MDIO OutputGo
- Added note regarding DDR ECC solutions to Table 7-25, Supported DDR3 Device CombinationsGo
- Added clarifications about validated DDR topology in Section 7.7.2.15, CK and ADDR_CTRL Topologies and Routing DefinitionGo
- Added the TI E2E™ Online Community link to the Community Resources section under Section 8, Device and Documentation SupportGo
- Added clarification note regarding X777 part number in Table 8-1, Nomenclature DescriptionGo