ZHCSN40K February 2019 – April 2024 DRA829J , DRA829J-Q1 , DRA829V , DRA829V-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
BALL NAMES in Mode 0: MCU_ADC0_AIN[7:0], MCU_ADC1_AIN[7:0] | ||||||
BALL NUMBERS:K24 / K25 / K26 / K27 / K28 / K29 / L24 / L25 / L26 / L27 / L28 / L29 / M24 / M25 / N23 / N24 | ||||||
Analog Input | ||||||
VMCU_ADC0/1_AIN[7:0] | Full-scale Input Range | VSS | VDDA_ADC0/1 | V | ||
DNL | Differential Non-Linearity | -1 | 0.5 | 4 | LSB | |
INL | Integral Non-Linearity | ±1 | ±4 | LSB | ||
LSBGAIN-ERROR | Gain Error | ±2 | LSB | |||
LSBOFFSET-ERROR | Offset Error | ±2 | LSB | |||
CIN | Input Sampling Capacitance | 5.5 | pF | |||
SNR | Signal-to-Noise Ratio | Input Signal: 200 kHz sine wave at -0.5 dB Full Scale | 70 | dB | ||
THD | Total Harmonic Distortion | Input Signal: 200 kHz sine wave at -0.5 dB Full Scale | 73 | dB | ||
SFDR | Spurious Free Dynamic Range | Input Signal: 200 kHz sine wave at -0.5 dB Full Scale | 76 | dB | ||
SNR(PLUS) | Signal-to-Noise Plus Distortion | Input Signal: 200 kHz sine wave at -0.5 dB Full Scale | 69 | dB | ||
RMCU_ADC0/1_AIN[0:7] | Input Impedance of MCU_ADC0/1_AIN[7:0] | f = input frequency | [1/((65.97 × 10–-12) × fSMPL_CLK)] | Ω | ||
IIN | Input Leakage | MCU_ADC0/1_AIN[7:0] = VSS | -10 | μA | ||
MCU_ADC0/1_AIN[7:0] = VDDA_ADC0/1 | 24 | μA | ||||
Sampling Dynamics | ||||||
FSMPL_CLK | SMPL_CLK Frequency | 60 | MHz | |||
tC | Conversion Time | 13 | ADC0/1 SMPL_CLK Cycles | |||
tACQ | Acquisition time | 2 | 257 | ADC0/1 SMPL_CLK Cycles | ||
TR | Sampling Rate | ADC0/1 SMPL_CLK = 60 MHz | 4 | MSPS | ||
CCISO | Channel to Channel Isolation | 100 | dB | |||
General Purpose Input Mode(1) | ||||||
VIL | Input low-level threshold | 0.35 × VDDA_ADC0/1 | V | |||
VILSS | Input high-level threshold steady state | 0.35 × VDDA_ADC0/1 | V | |||
VIH | Input high-level threshold | 0.65 × VDDA_ADC0/1 | V | |||
VIHSS | Input high-level threshold steady state | 0.65 × VDDA_ADC0/1 | V | |||
VHYS | Input Hysteresis Voltage | 200 | mV | |||
IIN | Input Leakage Current | VI = 1.8 V or 0 V | 6 | µA |