米6体育平台手机版

over operating free-air temperature (unless otherwise noted)

		MIN	MAX	UNIT
Input voltage⁽¹⁾	VCC	–0.3	20	V
	CS	–0.3	3.6
	PWMIN, FS, FR	–0.3	6
	GND	–0.3	0.3
	COM	–1	20
Output voltage⁽¹⁾	U, V, W	–1	20	V
	FG, RD	–0.3	20
	VCP	–0.3	25
	CPN	–0.3	20
	CPP	–0.3	25
	V5	–0.3	6
T_J	Operating junction temperature	–40	125	°C

(1) Voltage values are with respect to the network ground terminal unless otherwise noted.

			MIN	MAX	UNIT
T_stg	Storage temperature range		–55	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–4000	4000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–1000	1000
		Machine model (MM)	–200	200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Supply voltage	VCC	5	16	V
Voltage range	U, V, W	–0.7	17	V
	COM	–0.1	17
	FG, RD	–0.1	16
	PGND, GND	–0.1	0.1
	VCP	–0.1	22
	CPP	–0.1	22
	CPN	–0.1	16
	V5	–0.1	5.5
	PWMIN, FR, FS	–0.1	5.5
T_J	Operating junction temperature	–40	125	V

THERMAL METRIC⁽¹⁾		DRV11873	UNIT
		PWP
		16 PINS
R_θJA	Junction-to-ambient thermal resistance	39.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	30.3
R_θJB	Junction-to-board thermal resistance	25.6
ψ_JT	Junction-to-top characterization parameter	0.5
ψ_JB	Junction-to-board characterization parameter	10.2
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	3.6

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

over recommended operating free-air temperature (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_VCC	Supply current	T_A = 25°C; PWM = V_CC; V_CC = 12 V		2.7	5	mA
UVLO
V_{VUVLO-th_r}	UVLO threshold voltage	Rise threshold, T_A = 25°C		4.3	4.6	V
V_{UVLO-th_f}	UVLO threshold voltage	Fall threshold, T_A = 25°C	3.9	4.1		V
V_UVLO-thhys	UVLO threshold voltage hysteresis	T_A = 25°C	100	200	300	mV
INTEGRATED MOSFET
R_DSON	Series resistance (H + L)	T_A = 25°C; V_CC = 12 V; VCP = 19 V; I_OUT = 1.5 A		0.45	0.6	Ω
PWM
V_PWM-IH	High-level input voltage	V_CC ≥ 4.5 V	2.7			V
V_PWM-IL	Low-level input voltage	V_CC ≥ 4.5 V			0.8	V
ƒ_PWM	PWM input frequency		7		100	kHz
I_PWM-SOURCE	PWM source current		35	50	65	µA
FG
I_FG-SINK	FG pin sink current	V_FG = 0.3 V	5			mA
I_FG-short	FG pin short current limit	V_FG = 12 V		20	25	mA
RD
I_RD-SINK	RD pin sink current	V_RD = 0.3 V	5			mA
I_RD-short	RD pin short current limit	V_RD = 12 V		20	25	mA
FR and FS
V_FR-IH	High-level input voltage	V_CC ≥ 4.5 V	2.3			V
V_FR-IL	Low-level input voltage	V_CC ≥ 4.5 V			0.8	V
V_FS-th	FS set threshold voltage	V_CC ≥ 4.5 V	2.3		0.8	V
V5
V5	5-V LDO voltage	V_CC = 12 V	4.75	5	5.25	V
I_V5	5-V LDO load current	V_CC = 12 V		20		mA
LOCK PROTECTION
t_LOCK-ON	Lock detect time	FS = 0	0.875	1.25	1.625	s
t_LOCK-ON	Lock detect time	FS = 1	0.437	0.625	0.812	s
t_LOCK-OFF	Lock release time	FS = 0	4.375	6.25	8.125	s
t_LOCK-OFF	Lock release time	FS = 1	2.187	3.125	4.06	s
CURRENT LIMIT
	Current limit	CS pin to GND resistor = 3.3 kΩ	1.7	2	2.3	A
THERMAL SHUTDOWN
T_SDN	Shutdown temperature threshold	Shutdown temperature		160		°C
T_SDN	Shutdown temperature threshold	Hysteresis		10		°C