ZHCSFB0D June   2016  – November 2023 DRV2510-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input and Configurable Pre-amplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Designed for low EMI
      4. 7.3.4 Device Protection Systems
        1. 7.3.4.1 Diagnostics
          1. 7.3.4.1.1 Load Diagnostics
        2. 7.3.4.2 Faults During Load Diagnostics
        3. 7.3.4.3 Protection and Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation in Shutdown Mode
      2. 7.4.2 Operation in Standby Mode
      3. 7.4.3 Operation in Active Mode
    5. 7.5 Programming
      1. 7.5.1 General I2C Operation
      2. 7.5.2 Single-Byte and Multiple-Byte Transfers
      3. 7.5.3 Single-Byte Write
      4. 7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
      5. 7.5.5 Single-Byte Read
      6. 7.5.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x01
      2. 7.6.2 Address: 0x02
      3. 7.6.3 Address: 0x03
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Ended Source
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Optional Components
          2. 8.2.1.2.2 Capacitor Selection
          3. 8.2.1.2.3 Solenoid Selection
          4. 8.2.1.2.4 Output Filter Considerations
        3. 8.2.1.3 Application Curves
        4. 8.2.1.4 Differential Input Diagram
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.1 Overview

The DRV2510-Q1 device is a high current haptic driver specifically designed for inductive loads, such as solenoids and voice coils.

The output stage consists of a full H-bridge capable of delivering 3 A of peak current.

The design uses an ultra-efficient switching output technology developed by Texas Instruments, but with features added for the automotive industry. The DRV2510-Q1 device provides protection functions such as undervoltage lockout, over-current protection and over-temperature protection. This technology allows for reduced power consumption, reduced heat, and reduced peak currents in the electrical system.

The DRV2510-Q1 device is automotive qualified. The integrated load-dump protection reduces external voltage clamp cost and size, and the onboard load diagnostics report the status of the actuator through the digital interface.
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