ZHCS343C May   2012  – January 2023 DRV2665

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Support for Haptic Piezo Actuators
      2. 7.3.2  Flexible Front End Interface
      3. 7.3.3  Ramp Down Behavior
      4. 7.3.4  Low Latency Startup
      5. 7.3.5  Low Power Standby Mode
      6. 7.3.6  Device Reset
      7. 7.3.7  Amplifier Gain
      8. 7.3.8  Adjustable Boost Voltage
      9. 7.3.9  Adjustable Current Limit
      10. 7.3.10 Internal Charge Pump
      11. 7.3.11 Device Protection
        1. 7.3.11.1 Thermal Protection
        2. 7.3.11.2 Overcurrent Protection
        3. 7.3.11.3 Brownout Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 FIFO Mode
      2. 7.4.2 Analog Playback Mode
      3. 7.4.3 Low Voltage Operation Mode
    5. 7.5 Programming
      1. 7.5.1 Programming the Boost Voltage
      2. 7.5.2 Programming the Boost Current Limit
      3. 7.5.3 I2C Interface
        1. 7.5.3.1 General I2C Operation
        2. 7.5.3.2 Single-Byte and Multiple-Byte Transfers
        3. 7.5.3.3 Single-Byte Write
        4. 7.5.3.4 Multiple-Byte Write and Incremental Multiple-Byte Write
        5. 7.5.3.5 Single-Byte Read
        6. 7.5.3.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x00
      2. 7.6.2 Address: 0x01
      3. 7.6.3 Address: 0x02
      4. 7.6.4 Address: 0x0B
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Piezo Actuator Selection
        3. 8.2.2.3 Boost Capacitor Selection
        4. 8.2.2.4 Bulk Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Initialization Setup
      1. 8.3.1 Initialization Procedure
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5.3.4 Multiple-Byte Write and Incremental Multiple-Byte Write

A multiple-byte data write transfer is identical to a single-byte data write transfer except that multiple data bytes are transmitted by the master device to the DRV2665 device. After receiving each data byte, the DRV2665 device responds with an acknowledge bit as shown in Figure 7-6.

GUID-C837DECC-E96E-4E9A-9808-14FF3B31EAD5-low.gifFigure 7-6 Multiple-Byte Write Transfer
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |