ZHCSEY6E March   2013  – January 2023 DRV2667

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Support for Haptic Piezo Actuators
      2. 7.3.2  Flexible Front End Interface
      3. 7.3.3  Ramp Down Behavior
      4. 7.3.4  Low Latency Startup
      5. 7.3.5  Low Power Standby Mode
      6. 7.3.6  Device Reset
      7. 7.3.7  Amplifier Gain
      8. 7.3.8  Adjustable Boost Voltage
      9. 7.3.9  Adjustable Current Limit
      10. 7.3.10 Internal Charge Pump
      11. 7.3.11 Device Protection
        1. 7.3.11.1 Thermal Protection
        2. 7.3.11.2 Overcurrent Protection
        3. 7.3.11.3 Brownout Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 FIFO Mode
        1. 7.4.1.1 Waveform Timeout
      2. 7.4.2 Direct Playback from RAM Mode
      3. 7.4.3 Waveform Synthesis Playback Mode
      4. 7.4.4 Waveform Sequencer
      5. 7.4.5 Analog Playback Mode
      6. 7.4.6 Low Voltage Operation Mode
    5. 7.5 Programming
      1. 7.5.1 Programming the Boost Voltage
      2. 7.5.2 Programming the Boost Current Limit
      3. 7.5.3 Programming the RAM
        1. 7.5.3.1 Accessing the RAM
        2. 7.5.3.2 RAM Format
          1. 7.5.3.2.1 Programming the Waveform Sequencer
      4. 7.5.4 I2C Interface
        1. 7.5.4.1 General I2C Operation
        2. 7.5.4.2 Single-Byte and Multiple-Byte Transfers
        3. 7.5.4.3 Single-Byte Write
        4. 7.5.4.4 Multiple-Byte Write and Incremental Multiple-Byte Write
        5. 7.5.4.5 Single-Byte Read
        6. 7.5.4.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1  Address: 0x00
      2. 7.6.2  Address: 0x01
      3. 7.6.3  Address: 0x02
      4. 7.6.4  Address: 0x03
      5. 7.6.5  Address: 0x04
      6. 7.6.6  Address: 0x05
      7. 7.6.7  Address: 0x06
      8. 7.6.8  Address: 0x07
      9. 7.6.9  Address: 0x08
      10. 7.6.10 Address: 0x09
      11. 7.6.11 Address: 0x0A
      12. 7.6.12 Address: 0x0B
      13. 7.6.13 Address: 0xFF
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Piezo Actuator Selection
        3. 8.2.2.3 Boost Capacitor Selection
        4. 8.2.2.4 Bulk Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Initialization Setup
      1. 8.3.1 Initialization Procedure
      2. 8.3.2 Typical Usage Examples
        1. 8.3.2.1 Single Click or Alert Example
        2. 8.3.2.2 Library Storage Example
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
  12. 12Mechanical, Packaging, and Orderable Information

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Brownout Protection

The DRV2667 device has on-chip brownout protection. When activated, a reset signal is issued that returns the DRV2667 device to the initial default state. If the voltage regulator VREG goes below the brownout protection threshold (VBOT) the DRV2667 device automatically shuts down. When VREG returns to the typical output voltage (1.75 V), the DRV2667 device returns to the initial device state. The brownout protection threshold, VBOT, is typically at 0.84 V.

There is one exception to this behavior. The brownout circuit is designed to tolerate fast brownout conditions as shown by Case 1 in Figure 7-2. If the VDD ramp-up rate is slower than 3.6 kV/s, then the device can fall into an unknown state. In such a situation, to return to the initial default state the device must be power-cycled with a VDD ramp-up rate that is faster than 3.6 kV/s.

GUID-588ADD59-8716-4420-A703-46498E45338C-low.gifFigure 7-2 Brownout Behavior