ZHCSHJ6
February 2019
DRV5021-Q1
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
典型应用电路原理图
磁响应
4
修订历史记录
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Magnetic Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Field Direction Definition
7.3.2
Device Output
7.3.3
Power-On Time
7.3.4
Hall Element Location
7.3.5
Propagation Delay
7.3.6
Output Stage
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Applications
8.2.1
Proximity Sensing Circuit
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.2.1
Configuration Example
8.2.1.3
Application Curves
8.2.2
Alternative Two-Wire Application
8.2.2.1
Design Requirements
8.2.2.2
Detailed Design Procedure
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
器件和文档支持
11.1
文档支持
11.1.1
相关文档
11.2
接收文档更新通知
11.3
社区资源
11.4
商标
11.5
静电放电警告
11.6
术语表
12
机械、封装和可订购信息
封装选项
机械数据 (封装 | 引脚)
DBZ|3
MPDS108G
散热焊盘机械数据 (封装 | 引脚)
订购信息
zhcshj6_oa
6.2
ESD Ratings
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
(1)
±6000
V
Charged device model (CDM), per AEC Q100-011
±1000
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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