ZHCSEF4G December   2014  – March 2017 DRV5023-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Magnetic Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Field Direction Definition
      2. 7.3.2 Device Output
      3. 7.3.3 Power-On Time
      4. 7.3.4 Output Stage
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Overcurrent Protection (OCP)
        2. 7.3.5.2 Load Dump Protection
        3. 7.3.5.3 Reverse Supply Protection
        4. 7.3.5.4 Output Jitter Characteristic
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Standard Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Configuration Example
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Two-Wire Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
      2. 11.1.2 器件标记
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage VCC –22(2) 40 V
Voltage ramp rate (VCC), VCC < 5 V Unlimited V/µs
Voltage ramp rate (VCC), VCC > 5 V 0 2
Output pin voltage –0.5 40 V
Output pin reverse current during reverse supply condition 0 100 mA
Magnetic flux density, BMAX Unlimited
Operating junction temperature, TJ Q, see Figure 26 –40 150 °C
E, see Figure 26 –40 175
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Ensured by design. Only tested to –20 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V
Charged-device model (CDM), per AEC Q100-011 ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power supply voltage 2.7 38 V
VO Output pin voltage (OUT) 0 38 V
ISINK Output pin current sink (OUT)(1) 0 30 mA
TA Operating ambient temperature Q, see Figure 26 –40 125 °C
E, see Figure 26 –40 150
(1) Power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV5023-Q1 UNIT
DBZ (SOT-23) LPG (TO-92)
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 333.2 180 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.9 98.6 °C/W
RθJB Junction-to-board thermal resistance 66.9 154.9 °C/W
ψJT Junction-to-top characterization parameter 4.9 40 °C/W
ψJB Junction-to-board characterization parameter 65.2 154.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VCC)
VCC VCC operating voltage 2.7 38 V
ICC Operating supply current VCC = 2.7 to 38 V, TA = 25°C 2.7 mA
VCC = 2.7 to 38 V, TA = TA, MAX(1) 3 3.5
ton Power-on time AJ, BI versions 35 50 µs
FA, FI versions 35 70
OPEN DRAIN OUTPUT (OUT)
rDS(on) FET on-resistance VCC = 3.3 V, IO = 10 mA, TA = 25°C 22 Ω
VCC = 3.3 V, IO = 10 mA, TA = 125°C 36 50
Ilkg(off) Off-state leakage current Output Hi-Z 1 µA
PROTECTION CIRCUITS
VCCR Reverse supply voltage –22 V
IOCP Overcurrent protection level OUT shorted VCC 15 30 45 mA
(1) TA, MAX is 125°C for Q Grade 1 devices and 150°C for E Grade 0 devices (see Figure 26)

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPEN DRAIN OUTPUT (OUT)
td Output delay time B = BRP – 10 mT to BOP + 10 mT in 1 µs 13 25 µs
tr Output rise time (10% to 90%) R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V 200 ns
tf Output fall time (90% to 10%) R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V 31 ns
tj Output jitter Measured from 20 000 cycles of B increasing at a rate of 50 mT/ms (see Figure 19) ±8.5 µs

6.7 Magnetic Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT(1)
ƒBW Bandwidth(2) 20 30 kHz
DRV5023FA, DRV5023FI: 3.5 / 2 mT
BOP Operate point (see Figure 12 and Figure 13) 1.8 3.5 6.8 mT
BRP Release point (see Figure 12 and Figure 13) 0.5 2 4.2 mT
Bhys Hysteresis; Bhys= (BOP – BRP) 1.5 mT
BO Magnetic offset, BO = (BOP + BRP) / 2 2.8 mT
DRV5023AJ: 6.9 / 3.2 mT
BOP Operate point (see Figure 12 and Figure 13) 3 6.9 12 mT
BRP Release point (see Figure 12 and Figure 13) 1 3.2 5 mT
Bhys Hysteresis; Bhys= (BOP – BRP) 3.7 mT
BO Magnetic offset, BO = (BOP + BRP) / 2 5 mT
DRV5023BI: 14.5 / 6 mT
BOP Operate point (see Figure 12 and Figure 13) 6 14.5 24 mT
BRP Release point (see Figure 12 and Figure 13) 3 6 9 mT
Bhys Hysteresis; Bhys = (BOP – BRP)(3) 8.5 mT
BO Magnetic offset, BO = (BOP + BRP) / 2 10.3 mT
(1) 1 mT = 10 Gauss
(2) Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.
(3) |BOP| is always greater than |BRP|.

6.8 Typical Characteristics

TA > 125°C data is valid for Grade 0 devices only (E, see Figure 26)
DRV5023-Q1 D009_SLIS162.gif
Figure 1. ICC vs VCC
DRV5023-Q1 D001_SLIS151.gif
TA = 25°C
Figure 3. BOP vs VCC
DRV5023-Q1 D003_SLIS151.gif
TA = 25°C
Figure 5. BRP vs VCC
DRV5023-Q1 D007_SLIS151.gif
TA = 25°C
Figure 7. Hysteresis vs VCC
DRV5023-Q1 D005_SLIS151.gif
TA = 25°C
Figure 9. Offset vs VCC
DRV5023-Q1 D010_SLIS162.gif
Figure 2. ICC vs Temperature
DRV5023-Q1 D002_SLIS163.gif
VCC = 3.3 V
Figure 4. BOP vs Temperature
DRV5023-Q1 D004_SLIS163.gif
VCC = 3.3 V
Figure 6. BRP vs Temperature
DRV5023-Q1 D008_SLIS163.gif
VCC = 3.3 V
Figure 8. Hysteresis vs Temperature
DRV5023-Q1 D006_SLIS163.gif
VCC = 3.3 V
Figure 10. Offset vs Temperature
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