DRV5033 数字全极开关霍尔效应传感器
- ZHCSEF5G May 2014 – September 2016 DRV5033
  
  PRODUCTION DATA.

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DRV5033 数字全极开关霍尔效应传感器

本资源的原文使用英文撰写。为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

数字全极开关霍尔传感器
出色的温度稳定性
- 在温度范围内 B_OP ±10%
多种灵敏度选项 (B_OP/B_RP)：
- ±3.5/±2mT（FA，请参见Figure 24）
- ±6.9/±3.5mT（AJ，请参见 Figure 24）
检测南北磁场
支持宽电压范围
- 2.5V 至 38V
- 无需外部稳压器
宽运行电压范围
- T_A = -40 至 125°C（Q，请见 Figure 24）
开漏输出（30mA 灌电流）
35µs 快速上电时间
小型封装尺寸
- 表面贴装 3 引脚小外形尺寸晶体管 (SOT)-23 (DBZ)
  - 2.92mm × 2.37mm
- 插入式 3 引脚 TO-92 (LPG)
  - 4.00mm × 3.15mm
保护特性
- 反向电源保护（高达 -22V）
- 支持高达 40V 抛负载
- 输出短路保护
- 输出电流限制

2 应用

对接检测
门开关检测
接近感测
阀定位
脉冲计数

3 说明

DRV5033 器件是一款斩波稳定霍尔效应传感器，能够在整个温度范围内提供具有出色灵敏度稳定性和集成保护特性的磁场感测功能。

DRV5033 对磁场两极方向的响应相同。当应用的磁通量密度超过 B_OP 阈值时，DRV5033 开漏输出变为低电平。输出将保持低电平，直到磁通量密度降至 B_RP 以下之后变为高阻抗。输出灌电流能力为 30mA。反向极性保护高达 -22V 的宽工作电压范围（2.5 至 38V）使得此器件广泛适用于各种工业信号。

该器件提供针对反向电源情况、负载突降以及输出短路或过流故障的内部保护功能。

器件信息⁽¹⁾

器件型号	封装	封装尺寸（标称值）
DRV5033	SOT-23 (3)	2.92mm × 1.30mm
DRV5033	TO-92 (3)	4.00mm × 3.15mm

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

输出状态

SOT-23

TO-92

4 修订历史记录

Changes from F Revision (May 2016) to G Revision

Changed the power-on time for the FA version in the Electrical Characteristics tableGo
Added the Layout section Go
Added 接收文档更新通知部分Go

Changes from E Revision (February 2016) to F Revision

Revised preliminary limits for the FA versionGo

Changes from D Revision (December 2015) to E Revision

Added FA 器件选项Go
Added the typical bandwidth value to the Magnetic Characteristics tableGo

Changes from C Revision (May 2015) to D Revision

已更正 SOT-23 封装体尺寸并将 SIP 封装名称更正为 TO-92 Go
Added B_MAX to Absolute Maximum Ratings Go
Removed table note from junction temperature Go
已更新封装卷带选项 M 和空白Go
已添加 社区资源 Go

Changes from B Revision (September 2014) to C Revision

已将器件状态更新为量产数据 Go

Changes from A Revision (August 2014) to B Revision

Changed the maximum T_J value to 150°C Go
Added typical rise and fall time and removed maximum value in Switching Characteristics Go
Updated the Magnetic Characteristics values Go
Updated all Typical Characteristics graphs Go
Updated Equation 4 Go

Changes from * Revision (May 2014) to A Revision

Changed 高灵敏度选项“+6.9/+2.3mT (AJ)”至“+6.9/+3.5mT (AJ)”Go
Changed the maximum T_J value from 175°C to 150°CGo
Changed MIN value for I_OCP from 20 to 15 Go
Changed Max value for I_OCP from 40 to 45 Go
Updated Magnetic Characteristics table. Go

5 Pin Configuration and Functions

For additional configuration information, see 器件标记 and 机械、封装和可订购信息.

DBZ Package

3-Pin SOT-23

Top View

LPG Package

3-Pin TO-92

Top View

Pin Functions

PIN			TYPE	DESCRIPTION
NAME	DBZ	LPG	TYPE	DESCRIPTION
GND	3	2	GND	Ground pin
OUT	2	3	Output	Hall sensor open-drain output. The open drain requires a resistor pullup.
V_CC	1	1	PWR	2.5 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum) ceramic capacitor rated for V_CC.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Power supply voltage	V_CC	–22⁽²⁾	40	V
	Voltage ramp rate (V_CC), V_CC < 5 V	Unlimited		V/µs
	Voltage ramp rate (V_CC), V_CC > 5 V	0	2	V/µs
Output pin voltage		–0.5	40	V
Output pin reverse current during reverse supply condition		0	100	mA
Magnetic flux density, B_MAX		Unlimited
Operating junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Ensured by design. Only tested to –20 V.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±2500	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_CC	Power supply voltage	2.5	38	V
V_O	Output pin voltage (OUT)	0	38	V
I_SINK	Output pin current sink (OUT)⁽¹⁾	0	30	mA
T_A	Operating ambient temperature	–40	125	°C

(1) Power dissipation and thermal limits must be observed

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		DRV5033		UNIT
		DBZ (SOT-23)	LPG (TO-92)
		3 PINS	3 PINS
R_θJA	Junction-to-ambient thermal resistance	333.2	180	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	99.9	98.6	°C/W
R_θJB	Junction-to-board thermal resistance	66.9	154.9	°C/W
ψ_JT	Junction-to-top characterization parameter	4.9	40	°C/W
ψ_JB	Junction-to-board characterization parameter	65.2	154.9	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLIES (V_CC)
V_CC	V_CC operating voltage		2.5		38	V
I_CC	Operating supply current	V_CC = 2.5 to 38 V, T_A = 25°C		2.7		mA
I_CC	Operating supply current	V_CC = 2.5 to 38 V, T_A = 125°C		3	3.6	mA
t_on	Power-on time	AJ version		35	50	µs
t_on	Power-on time	FA version		35	70	µs
OPEN DRAIN OUTPUT (OUT)
r_DS(on)	FET on-resistance	V_CC = 3.3 V, I_O = 10 mA, T_A = 25°C		22		Ω
r_DS(on)	FET on-resistance	V_CC = 3.3 V, I_O = 10 mA, T_A = 125°C		36	50	Ω
I_lkg(off)	Off-state leakage current	Output Hi-Z			1	µA
PROTECTION CIRCUITS
V_CCR	Reverse supply voltage		–22			V
I_OCP	Overcurrent protection level	OUT shorted V_CC	15	30	45	mA

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
OPEN DRAIN OUTPUT (OUT)
t_d	Output delay time	B = B_RP – 10 mT to B_OP + 10 mT in 1 µs	13	25	µs
t_r	Output rise time (10% to 90%)	R1 = 1 kΩ, C_O = 50 pF, V_CC = 3.3 V	200		ns
t_f	Output fall time (90% to 10%)	R1 = 1 kΩ, C_O = 50 pF, V_CC = 3.3 V	31		ns

6.7 Magnetic Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT⁽¹⁾
ƒ_BW	Bandwidth⁽²⁾		20	30		kHz
DRV5033FA: ±3.5 / ±2 mT
B_OP	Operate point; see Figure 12	T_A = –40°C to 125°C	±1.8	±3.5	±6.8	mT
B_RP	Release point; see Figure 12		±0.5	±2	±4.2	mT
B_hys	Hysteresis; B_hys = (B_OP – B_RP)⁽³⁾			±1.5		mT
B_O	Magnetic offset; B_O = (B_OP + B_RP) / 2			±2.8		mT
DRV5033AJ: ±6.9 / ±3.5 mT
B_OP	Operate point; see Figure 12	T_A = –40°C to 125°C	±3	±6.9	±12	mT
B_RP	Release point; see Figure 12		±1	±3.5	±5	mT
B_hys	Hysteresis; B_hys = (B_OP – B_RP)⁽³⁾			3.4		mT
B_O	Magnetic offset; B_O = (B_OP + B_RP) / 2			5.2		mT

(1) 1 mT = 10 Gauss

(2) Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.

(3) |B_OP| is always greater than |B_RP|.

6.8 Typical Characteristics

Figure 1. I_CC vs V_CC

T_A = 25°C

Figure 3. DRV5033AJ, B_OP vs V_CC

T_A = 25°C

Figure 5. DRV5033AJ, B_RP vs V_CC

T_A = 25°C

Figure 7. DRV5033AJ, Hysteresis vs V_CC

T_A = 25°C

Figure 9. DRV5033AJ, Offset vs V_CC

Figure 2. I_CC vs Temperature

V_CC = 3.3 V

Figure 4. DRV5033AJ, B_OP vs Temperature

V_CC = 3.3 V

Figure 6. DRV5033AJ, B_RP vs Temperature

V_CC = 3.3 V

Figure 8. DRV5033AJ, Hysteresis vs Temperature

V_CC = 3.3 V

Figure 10. DRV5033AJ, Offset vs Temperature