ZHCSI41A April   2018  – February 2019 DRV5056

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型电路原理图
      2.      磁响应
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Magnetic Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Magnetic Flux Direction
      2. 7.3.2 Magnetic Response
      3. 7.3.3 Sensitivity Linearity
      4. 7.3.4 Ratiometric Architecture
      5. 7.3.5 Operating VCC Ranges
      6. 7.3.6 Sensitivity Temperature Compensation For Magnets
      7. 7.3.7 Power-On Time
      8. 7.3.8 Hall Element Location
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Selecting the Sensitivity Option
      2. 8.1.2 Temperature Compensation for Magnets
      3. 8.1.3 Adding a Low-Pass Filter
      4. 8.1.4 Designing for Wire Break Detection
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 What to Do and What Not to Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
ICC Operating supply current 6 10 mA
tON Power-on time (see Figure 17) B = 0 mT, no load on OUT 150 300 µs
fBW Sensing bandwidth 20 kHz
td Propagation delay time From change in B to change in OUT 10 µs
BND Input-referred RMS noise density VCC = 5 V 130 nT/√Hz
VCC = 3.3 V 215
BN Input-referred noise BND × 6.6 × √20 kHz VCC = 5 V 0.12 mTPP
VCC = 3.3 V 0.2
VN Output-referred noise(2) BN × S DRV5056A1 24 mVPP
DRV5056A2, DRV5056A6 12
DRV5056A3 6
DRV5056A4 3
(1) B is the applied magnetic flux density.
(2) VN describes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter.
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